Literature DB >> 22108243

Measuring the switching dynamics and energy efficiency of tantalum oxide memristors.

John Paul Strachan1, Antonio C Torrezan, Gilberto Medeiros-Ribeiro, R Stanley Williams.   

Abstract

We measured the real-time switching of metal-oxide memristors with sub-nanosecond resolution and recorded the evolution of the current and voltage during both ON (set) and OFF (reset) events. From these we determined the dynamical behavior of the conductivity for different applied bias amplitudes. Quantitative analysis of the energy cost and switching dynamics showed 115 fJ for ON-switching and 13 pJ for OFF-switching when resistance change was limited to 200%. Results are presented that show a favorable scaling with speed in terms of energy cost and reducing unnecessary damage to the devices.

Entities:  

Year:  2011        PMID： 22108243     DOI： 10.1088/0957-4484/22/50/505402

Source DB:  PubMed          Journal:  Nanotechnology        ISSN： 0957-4484            Impact factor:   3.874


  8 in total

1.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

2.  Robust resistive memory devices using solution-processable metal-coordinated azo aromatics.

Authors:  Sreetosh Goswami; Adam J Matula; Santi P Rath; Svante Hedström; Surajit Saha; Meenakshi Annamalai; Debabrata Sengupta; Abhijeet Patra; Siddhartha Ghosh; Hariom Jani; Soumya Sarkar; Mallikarjuna Rao Motapothula; Christian A Nijhuis; Jens Martin; Sreebrata Goswami; Victor S Batista; T Venkatesan
Journal:  Nat Mater       Date:  2017-10-23       Impact factor: 43.841

3.  Multibit memory operation of metal-oxide bi-layer memristors.

Authors:  Spyros Stathopoulos; Ali Khiat; Maria Trapatseli; Simone Cortese; Alexantrou Serb; Ilia Valov; Themis Prodromakis
Journal:  Sci Rep       Date:  2017-12-13       Impact factor: 4.379

4.  LAO-NCS: Laser Assisted Spin Torque Nano Oscillator-Based Neuromorphic Computing System.

Authors:  Hooman Farkhani; Tim Böhnert; Mohammad Tarequzzaman; José Diogo Costa; Alex Jenkins; Ricardo Ferreira; Jens Kargaard Madsen; Farshad Moradi
Journal:  Front Neurosci       Date:  2020-01-22       Impact factor: 4.677

5.  Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory.

Authors:  Amit Prakash; Debanjan Jana; Subhranu Samanta; Siddheswar Maikap
Journal:  Nanoscale Res Lett       Date:  2013-12-17       Impact factor: 4.703

6.  Charge transport mechanisms and memory effects in amorphous TaNx thin films.

Authors:  Nikolaos Spyropoulos-Antonakakis; Evangelia Sarantopoulou; Goran Drazic; Zoe Kollia; Dimitrios Christofilos; Gerasimos Kourouklis; Dimitrios Palles; Alkiviadis Constantinos Cefalas
Journal:  Nanoscale Res Lett       Date:  2013-10-17       Impact factor: 4.703

7.  Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.

Authors:  Wei Yi; Sergey E Savel'ev; Gilberto Medeiros-Ribeiro; Feng Miao; M-X Zhang; J Joshua Yang; Alexander M Bratkovsky; R Stanley Williams
Journal:  Nat Commun       Date:  2016-04-04       Impact factor: 14.919

8.  Real-time encoding and compression of neuronal spikes by metal-oxide memristors.

Authors:  Isha Gupta; Alexantrou Serb; Ali Khiat; Ralf Zeitler; Stefano Vassanelli; Themistoklis Prodromakis
Journal:  Nat Commun       Date:  2016-09-26       Impact factor: 14.919
  8 in total

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