Literature DB >> 22096196

Domain dynamics during ferroelectric switching.

Christopher T Nelson1, Peng Gao, Jacob R Jokisaari, Colin Heikes, Carolina Adamo, Alexander Melville, Seung-Hyub Baek, Chad M Folkman, Benjamin Winchester, Yijia Gu, Yuanming Liu, Kui Zhang, Enge Wang, Jiangyu Li, Long-Qing Chen, Chang-Beom Eom, Darrell G Schlom, Xiaoqing Pan.   

Abstract

The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. We used aberration-corrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO(3)) on a ferromagnetic electrode (La(0.7)Sr(0.3)MnO(3)). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.

Year:  2011        PMID: 22096196     DOI: 10.1126/science.1206980

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  34 in total

1.  Ferroelectric polarization reversal via successive ferroelastic transitions.

Authors:  Ruijuan Xu; Shi Liu; Ilya Grinberg; J Karthik; Anoop R Damodaran; Andrew M Rappe; Lane W Martin
Journal:  Nat Mater       Date:  2014-10-26       Impact factor: 43.841

2.  Losses in Ferroelectric Materials.

Authors:  Gang Liu; Shujun Zhang; Wenhua Jiang; Wenwu Cao
Journal:  Mater Sci Eng R Rep       Date:  2015-03-01       Impact factor: 36.214

3.  Electron microscopy: a phase transition glides into view.

Authors:  Wu Zhou
Journal:  Nat Nanotechnol       Date:  2014-04-20       Impact factor: 39.213

4.  Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

Authors:  Jun Jiang; Zi Long Bai; Zhi Hui Chen; Long He; David Wei Zhang; Qing Hua Zhang; Jin An Shi; Min Hyuk Park; James F Scott; Cheol Seong Hwang; An Quan Jiang
Journal:  Nat Mater       Date:  2017-11-20       Impact factor: 43.841

5.  Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients.

Authors:  Kanghyun Chu; Byung-Kweon Jang; Ji Ho Sung; Yoon Ah Shin; Eui-Sup Lee; Kyung Song; Jin Hong Lee; Chang-Su Woo; Seung Jin Kim; Si-Young Choi; Tae Yeong Koo; Yong-Hyun Kim; Sang-Ho Oh; Moon-Ho Jo; Chan-Ho Yang
Journal:  Nat Nanotechnol       Date:  2015-08-31       Impact factor: 39.213

6.  Distribution and altitudinal patterns of carbon and nitrogen storage in various forest ecosystems in the central Yunnan Plateau, China.

Authors:  Jianqiang Li; Qibo Chen; Zhuang Li; Bangxiao Peng; Jianlong Zhang; Xuexia Xing; Binyang Zhao; Denghui Song
Journal:  Sci Rep       Date:  2021-03-18       Impact factor: 4.379

7.  Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

Authors:  Souvik Kundu; Deepam Maurya; Michael Clavel; Yuan Zhou; Nripendra N Halder; Mantu K Hudait; Pallab Banerji; Shashank Priya
Journal:  Sci Rep       Date:  2015-02-16       Impact factor: 4.379

8.  Strain incompatibility and residual strains in ferroelectric single crystals.

Authors:  A Pramanick; J L Jones; G Tutuncu; D Ghosh; A D Stoica; K An
Journal:  Sci Rep       Date:  2012-12-05       Impact factor: 4.379

9.  Electric tuning of magnetization dynamics and electric field-induced negative magnetic permeability in nanoscale composite multiferroics.

Authors:  Chenglong Jia; Fenglong Wang; Changjun Jiang; Jamal Berakdar; Desheng Xue
Journal:  Sci Rep       Date:  2015-06-09       Impact factor: 4.379

10.  Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong.

Authors:  An Quan Jiang; Xiang Jian Meng; David Wei Zhang; Min Hyuk Park; Sijung Yoo; Yu Jin Kim; James F Scott; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2015-10-06       Impact factor: 4.379

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