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Literature DB >> 22065427

Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.

Feng Miao¹, John Paul Strachan, J Joshua Yang, Min-Xian Zhang, Ilan Goldfarb, Antonio C Torrezan, Peter Eschbach, Ronald D Kelley, Gilberto Medeiros-Ribeiro, R Stanley Williams.

Abstract

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

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Year: 2011 PMID： 22065427 DOI： 10.1002/adma.201103379

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

19 in total

1. Memristive devices for computing.

Authors: J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal: Nat Nanotechnol Date: 2013-01 Impact factor: 39.213

2. Mechanical Behaviors of the Origami-Inspired Horseshoe-Shaped Solar Arrays.

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Journal: Micromachines (Basel) Date: 2022-05-02 Impact factor: 3.523

3. Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb₂O₅-NaNbO₃ thin films.

Authors: Linglong Li; Lu Lu; Zhiguang Wang; Yanxi Li; Yonggang Yao; Dawei Zhang; Guang Yang; Jianjun Yao; Dwight Viehland; Yaodong Yang
Journal: Sci Rep Date: 2015-03-18 Impact factor: 4.379

4. Spectromicroscopic insights for rational design of redox-based memristive devices.

Authors: Christoph Baeumer; Christoph Schmitz; Amr H H Ramadan; Hongchu Du; Katharina Skaja; Vitaliy Feyer; Philipp Müller; Benedikt Arndt; Chun-Lin Jia; Joachim Mayer; Roger A De Souza; Claus Michael Schneider; Rainer Waser; Regina Dittmann
Journal: Nat Commun Date: 2015-10-19 Impact factor: 14.919

Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.

1. Memristive devices for computing.

2. Mechanical Behaviors of the Origami-Inspired Horseshoe-Shaped Solar Arrays.

3. Anatomy of vertical heteroepitaxial interfaces reveals the memristive mechanism in Nb₂O₅-NaNbO₃ thin films.

4. Spectromicroscopic insights for rational design of redox-based memristive devices.

5. Thermoelectric Seebeck effect in oxide-based resistive switching memory.

6. Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor.

7. Dynamic-load-enabled ultra-low power multiple-state RRAM devices.

8. Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film.

9. Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.

10. Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames.