| Literature DB >> 22050515 |
Marcel Winhold1, Christian H Schwalb, Fabrizio Porrati, Roland Sachser, Achilleas S Frangakis, Britta Kämpken, Andreas Terfort, Norbert Auner, Michael Huth.
Abstract
Binary systems of Pt-Si are prepared by electron-beam-induced deposition using the two precursors, trimethyl(methylcyclopentadienyl)platinum(IV) (MeCpPt(Me)(3)) and neopentasilane (Si(SiH(3))(4)), simultaneously. By varying the relative flux of the two precursors during deposition, we are able to study composites containing platinum and silicon in different ratios by means of energy-dispersive X-ray spectroscopy, atomic force microscopy, electrical transport measurements, and transmission electron microscopy. The results show strong evidence for the formation of a binary, metastable Pt(2)Si(3) phase, leading to a maximum in the conductivity for a Si/Pt ratio of 3:2.Entities:
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Year: 2011 PMID: 22050515 DOI: 10.1021/nn203134a
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881