Literature DB >> 22026889

Stable nontrivial Z2 topology in ultrathin Bi (111) films: a first-principles study.

Zheng Liu1, Chao-Xing Liu, Yong-Shi Wu, Wen-Hui Duan, Feng Liu, Jian Wu.   

Abstract

Recently, there have been intense efforts in searching for new topological insulator materials. Based on first-principles calculations, we find that all the ultrathin Bi (111) films are characterized by a nontrivial Z(2) number independent of the film thickness, without the odd-even oscillation of topological triviality as commonly perceived. The stable nontrivial Z(2) topology is retained by the concurrent band gap inversions at multiple time-reversal-invariant k points with the increasing film thickness and associated with the intermediate interbilayer coupling of the Bi film. Our calculations further indicate that the presence of metallic surface states in thick Bi (111) films can be effectively removed by surface adsorption.

Entities:  

Year:  2011        PMID: 22026889     DOI: 10.1103/PhysRevLett.107.136805

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  25 in total

1.  Creation of helical Dirac fermions by interfacing two gapped systems of ordinary fermions.

Authors:  Z F Wang; Meng-Yu Yao; Wenmei Ming; Lin Miao; Fengfeng Zhu; Canhua Liu; C L Gao; Dong Qian; Jin-Feng Jia; Feng Liu
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

2.  Quasiparticle dynamics in reshaped helical Dirac cone of topological insulators.

Authors:  Lin Miao; Z F Wang; Wenmei Ming; Meng-Yu Yao; Meixiao Wang; Fang Yang; Y R Song; Fengfeng Zhu; Alexei V Fedorov; Z Sun; C L Gao; Canhua Liu; Qi-Kun Xue; Chao-Xing Liu; Feng Liu; Dong Qian; Jin-Feng Jia
Journal:  Proc Natl Acad Sci U S A       Date:  2013-02-04       Impact factor: 11.205

3.  Organic topological insulators in organometallic lattices.

Authors:  Z F Wang; Zheng Liu; Feng Liu
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

4.  Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface.

Authors:  Miao Zhou; Wenmei Ming; Zheng Liu; Zhengfei Wang; Ping Li; Feng Liu
Journal:  Proc Natl Acad Sci U S A       Date:  2014-09-22       Impact factor: 11.205

5.  Higher-order topology induced by structural buckling.

Authors:  Huaqing Huang; Feng Liu
Journal:  Natl Sci Rev       Date:  2021-09-09       Impact factor: 23.178

6.  Spin-Orbit Coupling Electronic Structures of Organic-Group Functionalized Sb and Bi Topological Monolayers.

Authors:  Qi Gong; Guiling Zhang
Journal:  Nanomaterials (Basel)       Date:  2022-06-14       Impact factor: 5.719

7.  Formation of quantum spin Hall state on Si surface and energy gap scaling with strength of spin orbit coupling.

Authors:  Miao Zhou; Wenmei Ming; Zheng Liu; Zhengfei Wang; Yugui Yao; Feng Liu
Journal:  Sci Rep       Date:  2014-11-19       Impact factor: 4.379

8.  Quantum anomalous Hall and quantum spin-Hall phases in flattened Bi and Sb bilayers.

Authors:  Kyung-Hwan Jin; Seung-Hoon Jhi
Journal:  Sci Rep       Date:  2015-02-12       Impact factor: 4.379

9.  Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects.

Authors:  Guangfen Wu; Hua Chen; Yan Sun; Xiaoguang Li; Ping Cui; Cesare Franchini; Jinlan Wang; Xing-Qiu Chen; Zhenyu Zhang
Journal:  Sci Rep       Date:  2013-02-06       Impact factor: 4.379

10.  A new kind of 2D topological insulators BiCN with a giant gap and its substrate effects.

Authors:  Botao Fu; Yanfeng Ge; Wenyong Su; Wei Guo; Cheng-Cheng Liu
Journal:  Sci Rep       Date:  2016-07-21       Impact factor: 4.379

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