Literature DB >> 22026883

Full electrical control of the electron spin relaxation in GaAs quantum wells.

A Balocchi1, Q H Duong, P Renucci, B L Liu, C Fontaine, T Amand, D Lagarde, X Marie.   

Abstract

The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by time-resolved photoluminescence spectroscopy. By applying an external electric field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under a transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.

Year:  2011        PMID: 22026883     DOI: 10.1103/PhysRevLett.107.136604

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Gate control of the electron spin-diffusion length in semiconductor quantum wells.

Authors:  G Wang; B L Liu; A Balocchi; P Renucci; C R Zhu; T Amand; C Fontaine; X Marie
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

2.  Flying electron spin control gates.

Authors:  Paul L J Helgers; James A H Stotz; Haruki Sanada; Yoji Kunihashi; Klaus Biermann; Paulo V Santos
Journal:  Nat Commun       Date:  2022-09-14       Impact factor: 17.694

  2 in total

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