Literature DB >> 22026688

Narrowing of topological bands due to electronic orbital degrees of freedom.

Jörn W F Venderbos1, Maria Daghofer, Jeroen van den Brink.   

Abstract

The fractional quantum Hall effect has been predicted to occur in the absence of magnetic fields and at high temperature in lattice systems that have flat bands with a nonzero Chern number. We demonstrate that orbital degrees of freedom in frustrated lattice systems lead to a narrowing of topologically nontrivial bands. This robust effect does not rely on fine-tuned long-range hopping parameters and is directly relevant to a wide class of transition-metal compounds.

Entities:  

Year:  2011        PMID: 22026688     DOI: 10.1103/PhysRevLett.107.116401

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures.

Authors:  Di Xiao; Wenguang Zhu; Ying Ran; Naoto Nagaosa; Satoshi Okamoto
Journal:  Nat Commun       Date:  2011-12-20       Impact factor: 14.919

2.  Topological states in multi-orbital HgTe honeycomb lattices.

Authors:  W Beugeling; E Kalesaki; C Delerue; Y-M Niquet; D Vanmaekelbergh; C Morais Smith
Journal:  Nat Commun       Date:  2015-03-10       Impact factor: 14.919

  2 in total

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