| Literature DB >> 22002261 |
Young-Ho Ko1, Je-Hyung Kim, Li-Hua Jin, Suk-Min Ko, Bong-Joon Kwon, Joosung Kim, Taek Kim, Yong-Hoon Cho.
Abstract
Electrically driven quantum dot, wire, and well hybrid light-emitting diodes are demonstrated by using nanometer-sized pyramid structures of GaN. InGaN quantum dots, wires, and wells are formed at the tops, edges, and sidewalls of pyramids, respectively. The hybrid light-emitting diodes containing low-dimensional quantum structures are good candidates for broad-band highly efficient visible lighting sources.Entities:
Mesh:
Year: 2011 PMID: 22002261 DOI: 10.1002/adma.201102534
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849