| Literature DB >> 21999646 |
Xuelei Liang1, Brent A Sperling, Irene Calizo, Guangjun Cheng, Christina Ann Hacker, Qin Zhang, Yaw Obeng, Kai Yan, Hailin Peng, Qiliang Li, Xiaoxiao Zhu, Hui Yuan, Angela R Hight Walker, Zhongfan Liu, Lian-Mao Peng, Curt A Richter.
Abstract
We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device-compatible substrate. On the basis of these results, we have developed a "modified RCA clean" transfer method that has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved. This demonstration addresses an important step toward large-scale graphene-based electronic device applications.Entities:
Year: 2011 PMID: 21999646 DOI: 10.1021/nn203377t
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881