Literature DB >> 21989741

Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

Tsuyoshi Hasegawa1, Kazuya Terabe, Tohru Tsuruoka, Masakazu Aono.   

Abstract

An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2011        PMID: 21989741     DOI: 10.1002/adma.201102597

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  27 in total

1.  A current-driven single-atom memory.

Authors:  C Schirm; M Matt; F Pauly; J C Cuevas; P Nielaba; E Scheer
Journal:  Nat Nanotechnol       Date:  2013-09-01       Impact factor: 39.213

2.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

3.  Electronics: Electronic materials through time.

Authors:  B Keimer; J Maier; J Mannhart
Journal:  Nat Mater       Date:  2012-09       Impact factor: 43.841

4.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.

Authors:  Zhongrui Wang; Saumil Joshi; Sergey E Savel'ev; Hao Jiang; Rivu Midya; Peng Lin; Miao Hu; Ning Ge; John Paul Strachan; Zhiyong Li; Qing Wu; Mark Barnell; Geng-Lin Li; Huolin L Xin; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal:  Nat Mater       Date:  2016-09-26       Impact factor: 43.841

5.  Addressable Direct-Write Nanoscale Filament Formation and Dissolution by Nanoparticle-Mediated Bipolar Electrochemistry.

Authors:  Garrison M Crouch; Donghoon Han; Susan K Fullerton-Shirey; David B Go; Paul W Bohn
Journal:  ACS Nano       Date:  2017-05-04       Impact factor: 15.881

6.  Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.

Authors:  Anja Wedig; Michael Luebben; Deok-Yong Cho; Marco Moors; Katharina Skaja; Vikas Rana; Tsuyoshi Hasegawa; Kiran K Adepalli; Bilge Yildiz; Rainer Waser; Ilia Valov
Journal:  Nat Nanotechnol       Date:  2015-09-28       Impact factor: 39.213

7.  Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.

Authors:  Sheikh Ziaur Rahaman; Siddheswar Maikap; Ta-Chang Tien; Heng-Yuan Lee; Wei-Su Chen; Frederick T Chen; Ming-Jer Kao; Ming-Jinn Tsai
Journal:  Nanoscale Res Lett       Date:  2012-06-26       Impact factor: 4.703

8.  Conductive-bridging random access memory: challenges and opportunity for 3D architecture.

Authors:  Debanjan Jana; Sourav Roy; Rajeswar Panja; Mrinmoy Dutta; Sheikh Ziaur Rahaman; Rajat Mahapatra; Siddheswar Maikap
Journal:  Nanoscale Res Lett       Date:  2015-04-18       Impact factor: 4.703

9.  A learnable parallel processing architecture towards unity of memory and computing.

Authors:  H Li; B Gao; Z Chen; Y Zhao; P Huang; H Ye; L Liu; X Liu; J Kang
Journal:  Sci Rep       Date:  2015-08-14       Impact factor: 4.379

10.  Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories.

Authors:  Deok-Yong Cho; Stefan Tappertzhofen; Rainer Waser; Ilia Valov
Journal:  Sci Rep       Date:  2013-01-30       Impact factor: 4.379

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