Literature DB >> 21969308

Nanoscale, catalytically enhanced local oxidation of silicon-containing layers by 'burrowing' Ge quantum dots.

Chung-Yen Chien1, Yu-Jui Chang, Kuan-Hung Chen, Wei-Ting Lai, Tom George, Axel Scherer, Pei-Wen Li.   

Abstract

A new phenomenon of highly localized, nanoscale oxidation of silicon-containing layers has been observed. The localized oxidation enhancement observed in both Si and Si(3)N(4) layers appears to be catalyzed by the migration of Ge quantum dots (QDs). The sizes, morphology, and distribution of the Ge QDs are influenced by the oxidation of the Si-bearing layers. A two-step mechanism of dissolution of Si within the Ge QDs prior to oxidation is proposed.

Entities:  

Year:  2011        PMID： 21969308     DOI： 10.1088/0957-4484/22/43/435602

Source DB:  PubMed          Journal:  Nanotechnology        ISSN： 0957-4484            Impact factor:   3.874


  6 in total

1.  A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step.

Authors:  Wei-Ting Lai; Kuo-Ching Yang; Ting-Chia Hsu; Po-Hsiang Liao; Thomas George; Pei-Wen Li
Journal:  Nanoscale Res Lett       Date:  2015-05-19       Impact factor: 4.703

2.  The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient.

Authors:  Kuan-Hung Chen; Ching-Chi Wang; Tom George; Pei-Wen Li
Journal:  Nanoscale Res Lett       Date:  2014-07-07       Impact factor: 4.703

3.  High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects.

Authors:  Ming-Hao Kuo; Meng-Chun Lee; Horng-Chih Lin; Tom George; Pei-Wen Li
Journal:  Sci Rep       Date:  2017-03-16       Impact factor: 4.379

4.  The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation.

Authors:  Ching-Chi Wang; Po-Hsiang Liao; Ming-Hao Kuo; Tom George; Pei-Wen Li
Journal:  Nanoscale Res Lett       Date:  2013-04-25       Impact factor: 4.703

5.  Imaging and Quantitation Techniques for Tracking Cargo along Endosome-to-Golgi Transport Pathways.

Authors:  Pei Zhi Cheryl Chia; Paul A Gleeson
Journal:  Cells       Date:  2013-02-22       Impact factor: 6.600

6.  Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe.

Authors:  Tsung-Lin Huang; Kang-Ping Peng; Ching-Lun Chen; Horng-Chih Lin; Tom George; Pei-Wen Li
Journal:  Sci Rep       Date:  2019-08-05       Impact factor: 4.379
  6 in total

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