Warning: Undefined array key "mm" in /www/wwwroot/www.ai-bt.com/si.php on line 10 Deprecated: trim(): Passing null to parameter #1 ($string) of type string is deprecated in /www/wwwroot/www.ai-bt.com/si.php on line 10 Piezoresistance behaviors of p-type 6H-SiC nanowires.

Literature DB >> 21959148

Piezoresistance behaviors of p-type 6H-SiC nanowires.

Fengmei Gao¹, Jinju Zheng, Mingfang Wang, Guodong Wei, Weiyou Yang.

Abstract

We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors. This journal is © The Royal Society of Chemistry 2011

Entities: Chemical

Year: 2011 PMID： 21959148 DOI： 10.1039/c1cc14343c

Source DB: PubMed Journal: Chem Commun (Camb) ISSN： 1359-7345 Impact factor: 6.222

Keyword Cloud
Cited

6 in total

1. Mesporous 3C-SiC Hollow Fibers.

Authors: Yangwen Liu; Huilin Hou; Xinbo He; Weiyou Yang
Journal: Sci Rep Date: 2017-05-15 Impact factor: 4.379

Review 2. Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring.

Authors: Tuan-Anh Pham; Afzaal Qamar; Toan Dinh; Mostafa Kamal Masud; Mina Rais-Zadeh; Debbie G Senesky; Yusuke Yamauchi; Nam-Trung Nguyen; Hoang-Phuong Phan
Journal: Adv Sci (Weinh) Date: 2020-09-24 Impact factor: 16.806

Piezoresistance behaviors of p-type 6H-SiC nanowires.

1. Mesporous 3C-SiC Hollow Fibers.

Review 2. Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring.

3. Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures.

4. Highly sensitive p-type 4H-SiC van der Pauw sensor.

5. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating.

6. Strong Coupling of Folded Phonons with Plasmons in 6H-SiC Micro/Nanocrystals.