Literature DB >> 21935059

8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band.

Andrei Caliman1, Alexandru Mereuta, Grigore Suruceanu, Vladimir Iakovlev, Alexei Sirbu, Eli Kapon.   

Abstract

We report record-high fundamental mode output power of 8 mW at 0 °C and 1.5 mW at 100°C achieved with wafer-fused InAlGaAs-InP/AlGaAs-GaAs 1550 nm VCSELs incorporating a re-grown tunnel junction and un-doped AlGaAs/GaAs distributed Bragg reflectors. A broad wavelength tuning range of 15 nm by current variation and wavelength setting in a spectral range of 40 nm on the same VCSEL wafer are demonstrated as well. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, "green" photonics.

Year:  2011        PMID: 21935059     DOI: 10.1364/OE.19.016996

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

1.  Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence.

Authors:  Yue Song; Ligong Zhang; Yugang Zeng; Li Qin; Yinli Zhou; Yongqiang Ning; Lijun Wang
Journal:  Materials (Basel)       Date:  2018-06-20       Impact factor: 3.623

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.