| Literature DB >> 21902362 |
H F Yu1, X B Zhu, Z H Peng, Ye Tian, D J Cui, G H Chen, D N Zheng, X N Jing, Li Lu, S P Zhao, Siyuan Han.
Abstract
Quantum phase diffusion in a small underdamped Nb/AlO(x)/Nb junction (∼0.4 μm(2)) is demonstrated in a wide temperature range of 25-140 mK where macroscopic quantum tunneling (MQT) is the dominant escape mechanism. We propose a two-step transition model to describe the switching process in which the escape rate out of the potential well and the transition rate from phase diffusion to the running state are considered. The transition rate extracted from the experimental switching current distribution follows the predicted Arrhenius law in the thermal regime but is greatly enhanced when MQT becomes dominant.Mesh:
Year: 2011 PMID: 21902362 DOI: 10.1103/PhysRevLett.107.067004
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161