Literature DB >> 21901822

Modulating the charge-transfer enhancement in GERS using an electrical field under vacuum and an n/p-doping atmosphere.

Hua Xu1, Yabin Chen, Weigao Xu, Haoli Zhang, Jing Kong, Mildred S Dresselhaus, Jin Zhang.   

Abstract

The modulation of charger-transfer (CT) enhancement in graphene-enhanced Raman scattering (GERS) by an electric field under different atmospheres is reported. The GERS spectra of cobalt phthalocyanine (CoPc) molecules were collected by in situ Raman measurements under ambient air, vacuum, NH(3) atmosphere, and O(2) atmosphere, in which the Fermi level of graphene was modulated by an electrical field effect (EFE). The Raman scattering intensities of adsorbed molecules can be tuned to be stronger or weaker as the graphene Fermi level down-shifts or up-shifts under electrical field modulation. However, the Raman intensity modulation in GERS is seriously influenced by the hysteresis effect in graphene EFE, which makes the modulation ability small and shows strong gate voltage sweep rate dependence in ambient air. Fortunately, the hysteresis effect in graphene EFE can be decreased by performing the measurement under vacuum conditions, and thus the Raman modulation ability in GERS can be increased. Furthermore, compared with the vacuum condition, the Raman modulation ability shows an increase under an NH(3) atmosphere, while it shows a decrease under an O(2) atmosphere, which is due to the different Fermi level modulation region in different atmospheres. More interestingly, this Raman intensity modulation in GERS shows a hysteresis-like behavior that is the same as the graphene Fermi level modulation under the EFE in a different atmosphere. All these observations suggest that the Raman enhancement in GERS occurs through a charge-transfer (CT) enhancement mechanism and the CT process can be modulated by the graphene EFE. This technique will benefit the study of the basic properties of both graphene and chemical enhancement mechanism in surface-enhanced Raman spectroscopy (SERS).
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2011        PMID: 21901822     DOI: 10.1002/smll.201100546

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  5 in total

1.  Tuning surface-enhanced Raman scattering from graphene substrates using the electric field effect and chemical doping.

Authors:  Qingzhen Hao; Seth M Morton; Bei Wang; Yanhui Zhao; Lasse Jensen; Tony Jun Huang
Journal:  Appl Phys Lett       Date:  2013-01-02       Impact factor: 3.791

Review 2.  Electronic and electrochemical doping of graphene by surface adsorbates.

Authors:  Hugo Pinto; Alexander Markevich
Journal:  Beilstein J Nanotechnol       Date:  2014-10-23       Impact factor: 3.649

3.  Ultrasensitive molecular sensor using N-doped graphene through enhanced Raman scattering.

Authors:  Simin Feng; Maria Cristina Dos Santos; Bruno R Carvalho; Ruitao Lv; Qing Li; Kazunori Fujisawa; Ana Laura Elías; Yu Lei; Nestor Perea-López; Morinobu Endo; Minghu Pan; Marcos A Pimenta; Mauricio Terrones
Journal:  Sci Adv       Date:  2016-07-22       Impact factor: 14.136

Review 4.  Defect engineering in semiconductor-based SERS.

Authors:  Ge Song; Shan Cong; Zhigang Zhao
Journal:  Chem Sci       Date:  2021-12-01       Impact factor: 9.825

5.  Charge Transfer in Patterned Bilayer Film of Ag/ZnS Composite by Magnetron Control Sputtering.

Authors:  Yongjun Zhang; Hailong Zhou; Lijun Liang
Journal:  Molecules       Date:  2022-06-13       Impact factor: 4.927

  5 in total

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