| Literature DB >> 21879753 |
Max C Lemme1, Frank H L Koppens, Abram L Falk, Mark S Rudner, Hongkun Park, Leonid S Levitov, Charles M Marcus.
Abstract
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.Entities:
Year: 2011 PMID: 21879753 DOI: 10.1021/nl2019068
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189