| Literature DB >> 21875083 |
Hang Zhang1, Elena Bekyarova, Jhao-Wun Huang, Zeng Zhao, Wenzhong Bao, Fenglin Wang, Robert C Haddon, Chun Ning Lau.
Abstract
Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that nonsuspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ∼0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a semiconductor in which transport occurs via thermal activation over a transport gap ∼80 meV from 4 to 300 K. This noninvasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.Entities:
Year: 2011 PMID: 21875083 DOI: 10.1021/nl200803q
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189