Ferroelectric behavior in bismuth ferrite thin films of different thickness.

The ferroelectric behavior of BiFeO(3) thin films is modified by changing the film thicknesses, where the BiFeO(3) thin films with different thicknesses were grown on SrRuO(3)/Pt/TiO(2)/SiO(2)/Si(100) substrates by radio frequency sputtering. The mixture of (110) and (111) orientations is induced for all BiFeO(3) thin films regardless of their thicknesses, together with the columnar structure and the dense microstructure. Their dielectric behavior is almost independent of the film thickness where all thin films have a low dielectric loss. A giant remanent polarization of 2P(r) ≈ 156.6-188.8 μC/cm(2) is induced for the BiFeO(3) thin films in the thickness range of 190-600 nm. As a result, it is an effective way to improve the ferroelectric behavior of the BiFeO(3) thin film by tailoring the film thickness.