Literature DB >> 21828424

Spin-Hall effect and spin-Coulomb drag in doped semiconductors.

E M Hankiewicz1, G Vignale.   

Abstract

In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed.

Entities:  

Year:  2009        PMID: 21828424     DOI: 10.1088/0953-8984/21/25/253202

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  2 in total

1.  Spin Hall effect devices.

Authors:  Tomas Jungwirth; Jörg Wunderlich; Kamil Olejník
Journal:  Nat Mater       Date:  2012-04-23       Impact factor: 43.841

2.  Sub-picosecond temporal resolution of anomalous Hall currents in GaAs.

Authors:  Christian B Schmidt; Shekhar Priyadarshi; Mark Bieler
Journal:  Sci Rep       Date:  2017-09-11       Impact factor: 4.379

  2 in total

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