Three-dimensional fabrication on GaAs surfaces using electron-beam-induced carbon deposition followed by wet chemical etching.

We propose a method for fabricating three-dimensional structures on GaAs surfaces using electron beam (EB) irradiation followed by wet chemical etching. An etch-resistant hydrocarbon layer forms on the GaAs surface with the EB irradiation. Structures can be fabricated after etching using the hydrocarbon layer to block the etching. The height dependence on the irradiation and etching conditions was investigated as a means of controlling the height of the structures. A higher structure was fabricated at higher doses. The etching selectivity changed with the concentration of the etchant. A three-dimensional structure was fabricated based on these results, demonstrating the possible use of this method as a novel three-dimensional fabrication method for GaAs surfaces.