Literature DB >> 21825578

Intrinsic mobility in graphene.

R S Shishir1, D K Ferry.   

Abstract

Recent studies have shown that a high K dielectric solvent screens the impurities for room temperature transport in graphene and the mobility has been found to increase by orders of magnitude. This gives what is probably the intrinsic, phonon limited mobility at room temperature, and we have confirmed this with simulation. Mobility as high as 44 000 cm(2) V(-1) s(-1) was achieved. At very low density, impurity scattering still is the determining factor for mobility, but this is significantly reduced in the recent experiments due to the dielectric screening. At high density, impurity scattering becomes negligible.

Entities:  

Year:  2009        PMID: 21825578     DOI: 10.1088/0953-8984/21/23/232204

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  4 in total

1.  Graphene-Dielectric Integration for Graphene Transistors.

Authors:  Lei Liao; Xiangfeng Duan
Journal:  Mater Sci Eng R Rep       Date:  2010-11-22       Impact factor: 36.214

2.  Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition.

Authors:  H S Song; S L Li; H Miyazaki; S Sato; K Hayashi; A Yamada; N Yokoyama; K Tsukagoshi
Journal:  Sci Rep       Date:  2012-03-27       Impact factor: 4.379

3.  An electrical analogy to Mie scattering.

Authors:  José M Caridad; Stephen Connaughton; Christian Ott; Heiko B Weber; Vojislav Krstić
Journal:  Nat Commun       Date:  2016-09-27       Impact factor: 14.919

Review 4.  Nanostructured Graphene: An Active Component in Optoelectronic Devices.

Authors:  Chang-Hyun Kim
Journal:  Nanomaterials (Basel)       Date:  2018-05-14       Impact factor: 5.076

  4 in total

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