Literature DB >> 21823637

Metallic and insulating interfaces of amorphous SrTiO₃-based oxide heterostructures.

Yunzhong Chen1, Nini Pryds, Josée E Kleibeuker, Gertjan Koster, Jirong Sun, Eugen Stamate, Baogen Shen, Guus Rijnders, Søren Linderoth.   

Abstract

The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO(3)-based heterostructures with various insulating overlayers of amorphous LaAlO(3), SrTiO(3), and yttria-stabilized zirconia films. On the other hand, samples of amorphous La(7/8)Sr(1/8)MnO(3) films on SrTiO(3) substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface of SrTiO(3) substrates play an important role.

Entities:  

Year:  2011        PMID: 21823637     DOI: 10.1021/nl201821j

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  27 in total

1.  Tunable conductivity threshold at polar oxide interfaces.

Authors:  M L Reinle-Schmitt; C Cancellieri; D Li; D Fontaine; M Medarde; E Pomjakushina; C W Schneider; S Gariglio; Ph Ghosez; J-M Triscone; P R Willmott
Journal:  Nat Commun       Date:  2012-07-03       Impact factor: 14.919

2.  Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping.

Authors:  Y Z Chen; F Trier; T Wijnands; R J Green; N Gauquelin; R Egoavil; D V Christensen; G Koster; M Huijben; N Bovet; S Macke; F He; R Sutarto; N H Andersen; J A Sulpizio; M Honig; G E D K Prawiroatmodjo; T S Jespersen; S Linderoth; S Ilani; J Verbeeck; G Van Tendeloo; G Rijnders; G A Sawatzky; N Pryds
Journal:  Nat Mater       Date:  2015-06-01       Impact factor: 43.841

3.  A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3.

Authors:  Y Z Chen; N Bovet; F Trier; D V Christensen; F M Qu; N H Andersen; T Kasama; W Zhang; R Giraud; J Dufouleur; T S Jespersen; J R Sun; A Smith; J Nygård; L Lu; B Büchner; B G Shen; S Linderoth; N Pryds
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

4.  Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures.

Authors:  Diogo Castro Vaz; Edouard Lesne; Anke Sander; Hiroshi Naganuma; Eric Jacquet; Jacobo Santamaria; Agnès Barthélémy; Manuel Bibes
Journal:  J Vis Exp       Date:  2018-02-08       Impact factor: 1.355

5.  Strain-induced conductivity accelerated recoveries in LaAlO3/SrTiO3 heterostructure with millimeter scale.

Authors:  Xiangqi Wang; Min Zhang; Xirui Tian; Yinying Zhang; Junbo Gong; Azizur Rahman; Rucheng Dai; Zhongping Wang; Zengming Zhang
Journal:  RSC Adv       Date:  2018-11-12       Impact factor: 3.361

6.  High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces.

Authors:  G Herranz; F Sánchez; N Dix; M Scigaj; J Fontcuberta
Journal:  Sci Rep       Date:  2012-10-22       Impact factor: 4.379

7.  Anisotropic two-dimensional electron gas at the LaAlO₃/SrTiO₃ (110) interface.

Authors:  A Annadi; Q Zhang; X Renshaw Wang; N Tuzla; K Gopinadhan; W M Lü; A Roy Barman; Z Q Liu; A Srivastava; S Saha; Y L Zhao; S W Zeng; S Dhar; E Olsson; B Gu; S Yunoki; S Maekawa; H Hilgenkamp; T Venkatesan
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

8.  Universal electronic structure of polar oxide hetero-interfaces.

Authors:  Uwe Treske; Nadine Heming; Martin Knupfer; Bernd Büchner; Emiliano Di Gennaro; Amit Khare; Umberto Scotti Di Uccio; Fabio Miletto Granozio; Stefan Krause; Andreas Koitzsch
Journal:  Sci Rep       Date:  2015-09-28       Impact factor: 4.379

9.  Tailoring the Two Dimensional Electron Gas at Polar ABO3/SrTiO3 Interfaces for Oxide Electronics.

Authors:  Changjian Li; Zhiqi Liu; Weiming Lü; Xiao Renshaw Wang; Anil Annadi; Zhen Huang; Shengwei Zeng; T Venkatesan
Journal:  Sci Rep       Date:  2015-08-26       Impact factor: 4.379

10.  Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors.

Authors:  Cheol Hyoun Ahn; Karuppanan Senthil; Hyung Koun Cho; Sang Yeol Lee
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

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