Literature DB >> 21823176

Electrical characteristics of molybdenum disulfide flakes produced by liquid exfoliation.

Kangho Lee1, Hye-Young Kim, Mustafa Lotya, Jonathan N Coleman, Gyu-Tae Kim, Georg S Duesberg.   

Abstract

Entities:  

Mesh：

Substances：

Year:  2011        PMID： 21823176     DOI： 10.1002/adma.201101013

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


× No keyword cloud information.
  17 in total

1.  Ultrasensitive photodetectors based on monolayer MoS2.

Authors:  Oriol Lopez-Sanchez; Dominik Lembke; Metin Kayci; Aleksandra Radenovic; Andras Kis
Journal:  Nat Nanotechnol       Date:  2013-06-09       Impact factor: 39.213

2.  Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension.

Authors:  Zhongying Wang; Yin-Jia Zhang; Muchun Liu; Andrew Peterson; Robert H Hurt
Journal:  Nanoscale       Date:  2017-05-04       Impact factor: 7.790

3.  The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets.

Authors:  Manish Chhowalla; Hyeon Suk Shin; Goki Eda; Lain-Jong Li; Kian Ping Loh; Hua Zhang
Journal:  Nat Chem       Date:  2013-04       Impact factor: 24.427

Review 4.  Liquid-Exfoliated 2D Materials for Optoelectronic Applications.

Authors:  Fuad Indra Alzakia; Swee Ching Tan
Journal:  Adv Sci (Weinh)       Date:  2021-03-11       Impact factor: 16.806

Review 5.  Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides.

Authors:  Manoj K Jana; C N R Rao
Journal:  Philos Trans A Math Phys Eng Sci       Date:  2016-09-13       Impact factor: 4.226

Review 6.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Authors:  Qing Hua Wang; Kourosh Kalantar-Zadeh; Andras Kis; Jonathan N Coleman; Michael S Strano
Journal:  Nat Nanotechnol       Date:  2012-11       Impact factor: 39.213

7.  Highly responsive MoS2 photodetectors enhanced by graphene quantum dots.

Authors:  Caiyun Chen; Hong Qiao; Shenghuang Lin; Chi Man Luk; Yan Liu; Zaiquan Xu; Jingchao Song; Yunzhou Xue; Delong Li; Jian Yuan; Wenzhi Yu; Chunxu Pan; Shu Ping Lau; Qiaoliang Bao
Journal:  Sci Rep       Date:  2015-07-03       Impact factor: 4.379

8.  Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors.

Authors:  Hua-Min Li; Dae-Yeong Lee; Min Sup Choi; Deshun Qu; Xiaochi Liu; Chang-Ho Ra; Won Jong Yoo
Journal:  Sci Rep       Date:  2014-02-10       Impact factor: 4.379

9.  Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

Authors:  Weixia Gu; Jiaoyan Shen; Xiying Ma
Journal:  Nanoscale Res Lett       Date:  2014-02-28       Impact factor: 4.703

10.  Transition metal dichalcogenide growth via close proximity precursor supply.

Authors:  Maria O'Brien; Niall McEvoy; Toby Hallam; Hye-Young Kim; Nina C Berner; Damien Hanlon; Kangho Lee; Jonathan N Coleman; Georg S Duesberg
Journal:  Sci Rep       Date:  2014-12-09       Impact factor: 4.379
View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.