Formation of dot arrays with a pitch of 20 nm × 20 nm for patterned media using 30 keV EB drawing on thin calixarene resist.

We studied the possibility of achieving very fine-pitch dot arrays with a pitch of 20 nm × 20 nm using 30 keV electron beam (EB) drawing on negative calixarene resist. In order to form such patterns, we studied the dependence on resist thickness of the dot size and the packing. We propose EB drawing on an extremely thin film for very highly packed dot-array formation. Our experimental results demonstrate the possibility of forming highly packed dot-array patterns with a pitch of 20 nm × 20 nm and a resist thickness of about 13 nm, which corresponds to about 1.6 Tbits in(-2).