Controlled synthesis of InAs wires, dot and twin-dot array configurations by cleaved edge overgrowth.

We present experimental results on the controlled synthesis of InAs ordered nanostructures with three different grades of complexity: nanowires, quantum dot arrays, and double quantum dot arrays. A model for the diffusion of In adatoms on (110) surfaces explains the observed ordering and establishes general criteria for the optimized fabrication of the three different InAs nanostructure configurations, as a function of the growth conditions. These results are important for the use of ordered InAs nanostructures in future optoelectronic applications.