Literature DB >> 21809400

Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory.

Seo Hyoung Chang1, Shin Buhm Lee, Dae Young Jeon, So Jung Park, Gyu Tae Kim, Sang Mo Yang, Seung Chul Chae, Hyang Keun Yoo, Bo Soo Kang, Myoung-Jae Lee, Tae Won Noh.   

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Year:  2011        PMID： 21809400     DOI： 10.1002/adma.201102395

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  8 in total

1.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

2.  Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

Authors:  Yi-Jen Huang; Shih-Chun Chao; Der-Hsien Lien; Cheng-Yen Wen; Jr-Hau He; Si-Chen Lee
Journal:  Sci Rep       Date:  2016-04-07       Impact factor: 4.379

3.  Epitaxial stabilization and phase instability of VO2 polymorphs.

Authors:  Shinbuhm Lee; Ilia N Ivanov; Jong K Keum; Ho Nyung Lee
Journal:  Sci Rep       Date:  2016-01-20       Impact factor: 4.379

4.  Enhanced stability of filament-type resistive switching by interface engineering.

Authors:  Y B Zhu; K Zheng; X Wu; L K Ang
Journal:  Sci Rep       Date:  2017-05-02       Impact factor: 4.379

5.  Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x /Hf Stack.

Authors:  Haili Ma; Jie Feng; Hangbing Lv; Tian Gao; Xiaoxin Xu; Qing Luo; Tiancheng Gong; Peng Yuan
Journal:  Nanoscale Res Lett       Date:  2017-02-15       Impact factor: 4.703

6.  Thermally Stable Amorphous Oxide-based Schottky Diodes through Oxygen Vacancy Control at Metal/Oxide Interfaces.

Authors:  Seung-Min Lim; Han-Wool Yeon; Gi-Baek Lee; Min-Gi Jin; Seung-Yong Lee; Janghyun Jo; Miyoung Kim; Young-Chang Joo
Journal:  Sci Rep       Date:  2019-05-27       Impact factor: 4.379

7.  Insights into first-principles characterization of the monoclinic VO2(B) polymorph via DFT + U calculation: electronic, magnetic and optical properties.

Authors:  Elaheh Mohebbi; Eleonora Pavoni; Davide Mencarelli; Pierluigi Stipa; Luca Pierantoni; Emiliano Laudadio
Journal:  Nanoscale Adv       Date:  2022-08-09

8.  Dynamic-load-enabled ultra-low power multiple-state RRAM devices.

Authors:  Xiang Yang; I-Wei Chen
Journal:  Sci Rep       Date:  2012-10-17       Impact factor: 4.379
  8 in total

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