Literature DB >> 21806126

Structures and properties of neutral gallium clusters: a theoretical investigation.

Nedko Drebov1, Florian Weigend, Reinhart Ahlrichs.   

Abstract

A systematic and unbiased structure search based on a genetic algorithm in combination with density functional theory (DFT) procedures has been carried out to locate low-energy isomers of Ga(n) up to n = 25. For the smaller clusters up to n = 8 results are checked by coupled cluster singles and doubles with perturbative triples corrections (CCSD(T)) employing a quadruple zeta type basis set. The CCSD(T) calculations confirm a (3)Π(u) ground state for the dimer. Ga(3) has a doublet ground state 0.2 eV below two quartet states, whereas two isoenergetic triplet states are predicted for Ga(4) with D(4h) and a rhombus structure (D(2h)). Three low-lying isomers with doublet electronic states are found for Ga(5): a W-structure (C(2v)), a planar envelope (C(s)) at 0.015 eV, and a non-planar envelope (C(1)) 0.086 eV above the ground state. A triplet state for a trigonal prism (D(3h)) and a singlet for an open prism (C(2v)) are computed with virtually identical energy for Ga(6). The global minimum for Ga(7) is a capped trigonal prism (C(s)) and that for Ga(8) a distorted cube in D(2h). DFT provides a fair agreement with CCSD(T), deviations in dissociation energies are up to 0.2 eV for n ≤ 8. The structures for Ga(n) are mostly irregular for n ≥ 9, those for Ga(12) to Ga(17) can be derived from the truncated decahedron with D(5h) symmetry though highly distorted by Jahn-Teller effects, for example. For Ga(18) to Ga(23) we find stacks of five- and six-membered rings as global minima, e.g., 5-1-5-1-6 for Ga(18). Ga(24) and Ga(25) consist of layers with packing sequence ABCBA similar to those found for clusters of aluminum. The most important feature of computed cohesive energies is a rapid increase with n: for Ga(25) it reaches 2.46 eV, the experimental bulk value is 2.84 eV. Particularly stable clusters for Ga(n) are seen for n = 7, 14, and 20.
© 2011 American Institute of Physics

Entities:  

Year:  2011        PMID: 21806126     DOI: 10.1063/1.3615501

Source DB:  PubMed          Journal:  J Chem Phys        ISSN: 0021-9606            Impact factor:   3.488


  4 in total

1.  Mass spectrometric investigation of amorphous Ga-Sb-Se thin films.

Authors:  Ravi Mawale; Tomáš Halenkovič; Marek Bouška; Jan Gutwirth; Virginie Nazabal; Pankaj Lochan Bora; Lukáš Pečinka; Lubomír Prokeš; Josef Havel; Petr Němec
Journal:  Sci Rep       Date:  2019-07-15       Impact factor: 4.379

2.  Modulating the thermal and structural stability of gallenene via variation of atomistic thickness.

Authors:  Stephanie Lambie; Krista G Steenbergen; Nicola Gaston
Journal:  Nanoscale Adv       Date:  2020-12-23

3.  Understanding of multimetallic cluster growth.

Authors:  Stefan Mitzinger; Lies Broeckaert; Werner Massa; Florian Weigend; Stefanie Dehnen
Journal:  Nat Commun       Date:  2016-01-25       Impact factor: 14.919

4.  Geometrical Structures and Electronic Properties of Ga₆ and Ga₅X (X = B, C, N, O, F, Al, Si, P, S, Cl) Clusters.

Authors:  Yanfei Hu; Guangfu Ji; Yachuan Yao; Jiaonan Yuan; Weisen Xu
Journal:  Materials (Basel)       Date:  2018-04-04       Impact factor: 3.623

  4 in total

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