Literature DB >> 21797561

Observation of dirac holes and electrons in a topological insulator.

A A Taskin1, Zhi Ren, Satoshi Sasaki, Kouji Segawa, Yoichi Ando.   

Abstract

We show that in the new topological-insulator compound Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that in this material the transport properties sharply reflect the time dependence of the surface chemical potential, presenting a sign change in the Hall coefficient with time. We demonstrate that such an evolution makes us observe both Dirac holes and electrons on the surface, which allows us to reconstruct the surface band dispersion across the Dirac point.

Year:  2011        PMID: 21797561     DOI: 10.1103/PhysRevLett.107.016801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  36 in total

1.  Tunable Dirac cone in the topological insulator Bi(2-x)Sb(x)Te(3-y)Se(y).

Authors:  T Arakane; T Sato; S Souma; K Kosaka; K Nakayama; M Komatsu; T Takahashi; Zhi Ren; Kouji Segawa; Yoichi Ando
Journal:  Nat Commun       Date:  2012-01-24       Impact factor: 14.919

2.  Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators.

Authors:  Jinsong Zhang; Cui-Zu Chang; Zuocheng Zhang; Jing Wen; Xiao Feng; Kang Li; Minhao Liu; Ke He; Lili Wang; Xi Chen; Qi-Kun Xue; Xucun Ma; Yayu Wang
Journal:  Nat Commun       Date:  2011-12-06       Impact factor: 14.919

3.  Josephson supercurrent through a topological insulator surface state.

Authors:  M Veldhorst; M Snelder; M Hoek; T Gang; V K Guduru; X L Wang; U Zeitler; W G van der Wiel; A A Golubov; H Hilgenkamp; A Brinkman
Journal:  Nat Mater       Date:  2012-02-19       Impact factor: 43.841

4.  Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment.

Authors:  Chaoyu Chen; Shaolong He; Hongming Weng; Wentao Zhang; Lin Zhao; Haiyun Liu; Xiaowen Jia; Daixiang Mou; Shanyu Liu; Junfeng He; Yingying Peng; Ya Feng; Zhuojin Xie; Guodong Liu; Xiaoli Dong; Jun Zhang; Xiaoyang Wang; Qinjun Peng; Zhimin Wang; Shenjin Zhang; Feng Yang; Chuangtian Chen; Zuyan Xu; Xi Dai; Zhong Fang; X J Zhou
Journal:  Proc Natl Acad Sci U S A       Date:  2012-02-21       Impact factor: 11.205

5.  Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi₂Se₃ topological insulator nanoribbons.

Authors:  Seung Sae Hong; Judy J Cha; Desheng Kong; Yi Cui
Journal:  Nat Commun       Date:  2012-03-27       Impact factor: 14.919

6.  Vanishing quantum oscillations in Dirac semimetal ZrTe5.

Authors:  Jingyue Wang; Jingjing Niu; Baoming Yan; Xinqi Li; Ran Bi; Yuan Yao; Dapeng Yu; Xiaosong Wu
Journal:  Proc Natl Acad Sci U S A       Date:  2018-08-27       Impact factor: 11.205

7.  Topological crystalline insulator states in Pb(1-x)Sn(x)Se.

Authors:  P Dziawa; B J Kowalski; K Dybko; R Buczko; A Szczerbakow; M Szot; E Łusakowska; T Balasubramanian; B M Wojek; M H Berntsen; O Tjernberg; T Story
Journal:  Nat Mater       Date:  2012-09-30       Impact factor: 43.841

8.  Dirac electron states formed at the heterointerface between a topological insulator and a conventional semiconductor.

Authors:  R Yoshimi; A Tsukazaki; K Kikutake; J G Checkelsky; K S Takahashi; M Kawasaki; Y Tokura
Journal:  Nat Mater       Date:  2014-03       Impact factor: 43.841

9.  Quantum capacitance in topological insulators.

Authors:  Faxian Xiu; Nicholas Meyer; Xufeng Kou; Liang He; Murong Lang; Yong Wang; Xinxin Yu; Alexei V Fedorov; Jin Zou; Kang L Wang
Journal:  Sci Rep       Date:  2012-09-18       Impact factor: 4.379

10.  Weak anti-localization and quantum oscillations of surface states in topological insulator Bi₂Se₂Te.

Authors:  Lihong Bao; Liang He; Nicholas Meyer; Xufeng Kou; Peng Zhang; Zhi-Gang Chen; Alexei V Fedorov; Jin Zou; Trevor M Riedemann; Thomas A Lograsso; Kang L Wang; Gary Tuttle; Faxian Xiu
Journal:  Sci Rep       Date:  2012-10-11       Impact factor: 4.379

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