Literature DB >> 21770666

Electronic structure of the topological insulator Bi2Se3 using angle-resolved photoemission spectroscopy: evidence for a nearly full surface spin polarization.

Z-H Pan1, E Vescovo, A V Fedorov, D Gardner, Y S Lee, S Chu, G D Gu, T Valla.   

Abstract

We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi2Se3, a model TI. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of kz = Z plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, ~0.75, much higher than previously reported. Our results demonstrate that the topological surface state on Bi2Se3 is highly spin polarized and that the dominant factors limiting the polarization are mainly extrinsic.

Year:  2011        PMID: 21770666     DOI: 10.1103/PhysRevLett.106.257004

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  23 in total

1.  Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3.

Authors:  C H Li; O M J van 't Erve; J T Robinson; Y Liu; L Li; B T Jonker
Journal:  Nat Nanotechnol       Date:  2014-02-23       Impact factor: 39.213

2.  Electrical injection and detection of spin-polarized currents in topological insulator Bi2Te2Se.

Authors:  Jifa Tian; Ireneusz Miotkowski; Seokmin Hong; Yong P Chen
Journal:  Sci Rep       Date:  2015-09-22       Impact factor: 4.379

3.  Polarization dependent photocurrent in the Bi2Te3 topological insulator film for multifunctional photodetection.

Authors:  J D Yao; J M Shao; S W Li; D H Bao; G W Yang
Journal:  Sci Rep       Date:  2015-09-16       Impact factor: 4.379

4.  Topological insulator metamaterials with tunable negative refractive index in the optical region.

Authors:  Tun Cao; Shuai Wang
Journal:  Nanoscale Res Lett       Date:  2013-12-13       Impact factor: 4.703

5.  Electrical Detection of the Helical Spin Texture in a p-type Topological Insulator Sb2Te3.

Authors:  C H Li; O M J van 't Erve; Y Y Li; L Li; B T Jonker
Journal:  Sci Rep       Date:  2016-07-11       Impact factor: 4.379

6.  2D layered transport properties from topological insulator Bi2Se3 single crystals and micro flakes.

Authors:  Olivio Chiatti; Christian Riha; Dominic Lawrenz; Marco Busch; Srujana Dusari; Jaime Sánchez-Barriga; Anna Mogilatenko; Lada V Yashina; Sergio Valencia; Akin A Ünal; Oliver Rader; Saskia F Fischer
Journal:  Sci Rep       Date:  2016-06-07       Impact factor: 4.379

7.  Pure spin current devices based on ferromagnetic topological insulators.

Authors:  Matthias Götte; Michael Joppe; Thomas Dahm
Journal:  Sci Rep       Date:  2016-10-26       Impact factor: 4.379

8.  Topological signatures in the electronic structure of graphene spirals.

Authors:  Stas M Avdoshenko; Pekka Koskinen; Haldun Sevinçli; Alexey A Popov; Claudia G Rocha
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

9.  High-mobility Bi2Se3 nanoplates manifesting quantum oscillations of surface states in the sidewalls.

Authors:  Yuan Yan; Li-Xian Wang; Xiaoxing Ke; Gustaaf Van Tendeloo; Xiao-Song Wu; Da-Peng Yu; Zhi-Min Liao
Journal:  Sci Rep       Date:  2014-01-22       Impact factor: 4.379

10.  Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering.

Authors:  Wen Jie Wang; Kuang Hong Gao; Zhi Qing Li
Journal:  Sci Rep       Date:  2016-05-04       Impact factor: 4.379

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