Literature DB >> 21753925

Cu(2)ZnSiS(4).

Kimberly A Rosmus1, Jennifer A Aitken.   

Abstract

Single crystals of Cu(2)ZnSiS(4), dicopper(I) zinc silicon tetrasulfide, have been prepared via high-temperature solid-state synthesis. Cu(2)ZnSiS(4) was found to have the wurtz-stannite structure type, like that of Li(2)CdGeS(4), Li(2)CdSnS(4), and Cu(2)CdSiS(4). Each sulfur anion is tetra-hedrally coordinated by two Cu cations, one Si cation, and one Zn cation, forming a three-dimensional honeycomb structure. When viewed along the c axis, the atoms are aligned in rows in which each cation alternates with the sulfur anions.

Entities:  

Year:  2011        PMID: 21753925      PMCID: PMC3099923          DOI: 10.1107/S1600536811008889

Source DB:  PubMed          Journal:  Acta Crystallogr Sect E Struct Rep Online        ISSN: 1600-5368


Related literature

For synthetic procedures, see: Himmrich & Haeuseler (1991 ▶); Nitsche et al. (1967 ▶); Yao et al. (1987 ▶). For related structures, see: Chapuis & Niggli (1972 ▶); Lekse et al. (2008 ▶, 2009 ▶); Schäfer & Nitsche (1974 ▶). For optical properties, see: Levcenco et al. (2010 ▶).

Experimental

Crystal data

Cu2ZnSiS4 M = 348.78 Orthorhombic, a = 7.4374 (1) Å b = 6.4001 (1) Å c = 6.1394 (1) Å V = 292.24 (1) Å3 Z = 2 Mo Kα radiation μ = 12.77 mm−1 T = 296 K 0.13 × 0.07 × 0.06 mm

Data collection

Bruker SMART APEX diffractometer Absorption correction: multi-scan (SADABS; Sheldrick, 2002 ▶) T min = 0.290, T max = 0.500 5153 measured reflections 1078 independent reflections 1023 reflections with I > 2σ(I) R int = 0.021

Refinement

R[F 2 > 2σ(F 2)] = 0.020 wR(F 2) = 0.051 S = 1.14 1078 reflections 44 parameters 1 restraint Δρmax = 0.72 e Å−3 Δρmin = −1.01 e Å−3 Absolute structure: Flack (1983 ▶), 449 Friedel pairs Flack parameter: 0.02 (1) Data collection: SMART (Bruker, 1998 ▶); cell refinement: SAINT (Bruker, 1998 ▶); data reduction: SAINT; program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: CrystalMaker (Palmer, 2010 ▶); software used to prepare material for publication: publCIF (Westrip, 2010 ▶). Crystal structure: contains datablocks I, global. DOI: 10.1107/S1600536811008889/si2337sup1.cif Structure factors: contains datablocks I. DOI: 10.1107/S1600536811008889/si2337Isup2.hkl Additional supplementary materials: crystallographic information; 3D view; checkCIF report
Cu2ZnSiS4F(000) = 332
Mr = 348.78Dx = 3.964 Mg m3
Orthorhombic, Pmn21Mo Kα radiation, λ = 0.71073 Å
Hall symbol: P 2ac -2Cell parameters from 3127 reflections
a = 7.4374 (1) Åθ = 3.2–32.2°
b = 6.4001 (1) ŵ = 12.77 mm1
c = 6.1394 (1) ÅT = 296 K
V = 292.24 (1) Å3Rod, blue
Z = 20.13 × 0.07 × 0.06 mm
Bruker SMART APEX diffractometer1078 independent reflections
Radiation source: fine-focus sealed tube1023 reflections with I > 2σ(I)
graphiteRint = 0.021
φ and ω scansθmax = 32.9°, θmin = 3.2°
Absorption correction: multi-scan (SADABS; Sheldrick, 2002)h = −11→11
Tmin = 0.290, Tmax = 0.500k = −9→9
5153 measured reflectionsl = −9→9
Refinement on F2Secondary atom site location: difference Fourier map
Least-squares matrix: fullw = 1/[σ2(Fo2) + (0.0067P)2 + 0.2702P] where P = (Fo2 + 2Fc2)/3
R[F2 > 2σ(F2)] = 0.020(Δ/σ)max < 0.001
wR(F2) = 0.051Δρmax = 0.72 e Å3
S = 1.14Δρmin = −1.01 e Å3
1078 reflectionsExtinction correction: SHELXL97 (Sheldrick, 2008), Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
44 parametersExtinction coefficient: 0.025 (1)
1 restraintAbsolute structure: Flack (1983), 449 Friedel pairs
Primary atom site location: structure-invariant direct methodsFlack parameter: 0.02 (1)
Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.
xyzUiso*/Ueq
Cu10.24741 (3)0.17426 (4)0.33723 (8)0.0133 (1)
Zn10.00000.34747 (7)0.84124 (15)0.0211 (1)
Si10.00000.6743 (1)0.3451 (4)0.0071 (1)
S10.00000.3611 (1)0.4632 (1)0.0094 (1)
S20.00000.6784 (1)0.9961 (2)0.0089 (2)
S30.26269 (8)0.1724 (1)−0.0411 (1)0.0100 (1)
U11U22U33U12U13U23
Cu10.0141 (1)0.0135 (1)0.0125 (2)−0.0007 (1)−0.0008 (1)0.0000 (2)
Zn10.0235 (2)0.0210 (2)0.0191 (3)0.0000.000−0.0016 (3)
Si10.0078 (3)0.0077 (3)0.0058 (5)0.0000.0000.0007 (4)
S10.0126 (3)0.0072 (3)0.0085 (5)0.0000.0000.0011 (4)
S20.0099 (3)0.0104 (3)0.0064 (6)0.0000.000−0.0001 (3)
S30.0089 (2)0.0101 (3)0.0110 (5)−0.0012 (1)0.0006 (3)0.0000 (3)
Cu1—S2i2.3170 (7)Si1—S3vi2.136 (1)
Cu1—S32.325 (1)Si1—S2vii2.143 (3)
Cu1—S12.3270 (6)S1—Cu1viii2.3270 (6)
Cu1—S3ii2.3426 (7)S2—Si1iv2.143 (3)
Zn1—S22.322 (1)S2—Cu1vi2.3170 (7)
Zn1—S12.322 (1)S2—Cu1v2.3170 (7)
Zn1—S3iii2.3650 (7)S3—Si1i2.136 (1)
Zn1—S3iv2.3650 (7)S3—Cu1ix2.3426 (7)
Si1—S12.131 (1)S3—Zn1vii2.3650 (7)
Si1—S3v2.136 (1)
S2i—Cu1—S3112.51 (4)Si1—S1—Zn1112.05 (8)
S2i—Cu1—S1106.98 (3)Si1—S1—Cu1viii111.72 (5)
S3—Cu1—S1111.92 (4)Zn1—S1—Cu1viii108.24 (4)
S2i—Cu1—S3ii106.09 (4)Si1—S1—Cu1111.72 (5)
S3—Cu1—S3ii108.38 (3)Zn1—S1—Cu1108.24 (4)
S1—Cu1—S3ii110.82 (4)Cu1viii—S1—Cu1104.51 (4)
S2—Zn1—S1112.01 (5)Si1iv—S2—Cu1vi115.21 (4)
S2—Zn1—S3iii107.88 (4)Si1iv—S2—Cu1v115.21 (4)
S1—Zn1—S3iii108.84 (4)Cu1vi—S2—Cu1v108.34 (5)
S2—Zn1—S3iv107.88 (4)Si1iv—S2—Zn1113.46 (6)
S1—Zn1—S3iv108.84 (4)Cu1vi—S2—Zn1101.47 (4)
S3iii—Zn1—S3iv111.40 (5)Cu1v—S2—Zn1101.47 (4)
S1—Si1—S3v108.68 (7)Si1i—S3—Cu1111.38 (7)
S1—Si1—S3vi108.68 (7)Si1i—S3—Cu1ix110.92 (5)
S3v—Si1—S3vi111.40 (7)Cu1—S3—Cu1ix108.76 (3)
S1—Si1—S2vii110.60 (9)Si1i—S3—Zn1vii111.42 (5)
S3v—Si1—S2vii108.74 (7)Cu1—S3—Zn1vii105.21 (4)
S3vi—Si1—S2vii108.74 (7)Cu1ix—S3—Zn1vii108.95 (3)
Table 1

Selected bond lengths (Å)

Cu1—S2i2.3170 (7)
Cu1—S32.325 (1)
Cu1—S12.3270 (6)
Cu1—S3ii2.3426 (7)
Zn1—S22.322 (1)
Zn1—S12.322 (1)
Zn1—S3iii2.3650 (7)
Zn1—S3iv2.3650 (7)
Si1—S12.131 (1)
Si1—S3v2.136 (1)
Si1—S3vi2.136 (1)
Si1—S2vii2.143 (3)

Symmetry codes: (i) ; (ii) ; (iii) ; (iv) ; (v) ; (vi) ; (vii) .

  2 in total

1.  A short history of SHELX.

Authors:  George M Sheldrick
Journal:  Acta Crystallogr A       Date:  2007-12-21       Impact factor: 2.290

2.  Second-harmonic generation and crystal structure of the diamond-like semiconductors Li(2)CdGeS(4) and Li(2)CdSnS(4).

Authors:  Jonathan W Lekse; Meghann A Moreau; Katie L McNerny; Jeongho Yeon; P Shiv Halasyamani; Jennifer A Aitken
Journal:  Inorg Chem       Date:  2009-08-17       Impact factor: 5.165

  2 in total

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