Literature DB >> 21747469

Role of rigidity and temperature in the kinetics of photodarkening in Ge(x)As(45-x)Se55 thin films.

A R Barik1, K V Adarsh, Ramakanta Naik, R Ganesan, Guang Yang, Donghui Zhao, Himanshu Jain, K Shimakawa.   

Abstract

We present insightful results on the kinetics of photodarkening (PD) in Ge(x)As(45-x)Se55 glasses at the ambient and liquid helium temperatures when the network rigidity is increased by varying x from 0 to 16. We observe a many fold change in PD and its kinetics with decreasing network flexibility and temperature. Moreover, temporal evolution of PD shows a dramatic change with increasing x.

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Year:  2011        PMID: 21747469     DOI: 10.1364/OE.19.013158

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  3 in total

1.  Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35-x)Se65 thin films.

Authors:  Pritam Khan; H Jain; K V Adarsh
Journal:  Sci Rep       Date:  2014-02-07       Impact factor: 4.379

2.  Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film.

Authors:  A R Barik; Mukund Bapna; D A Drabold; K V Adarsh
Journal:  Sci Rep       Date:  2014-01-14       Impact factor: 4.379

3.  Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge₅As₃₀Se₆₅ thin film.

Authors:  Pritam Khan; Tarun Saxena; H Jain; K V Adarsh
Journal:  Sci Rep       Date:  2014-10-10       Impact factor: 4.379

  3 in total

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