| Literature DB >> 21740870 |
A M Beltrán1, E A Marquis, A G Taboada, J M Ripalda, J M García, S I Molina.
Abstract
Unambiguous evidence of ring-shaped self-assembled GaSb nanostructures grown by molecular beam epitaxy is presented on the basis of atom-probe tomography reconstructions and dark field transmission electron microscopy imaging. The GaAs capping process causes a strong segregation of Sb out of the center of GaSb quantum dots, leading to the self-assembled GaAs(x)Sb(1-x) quantum rings of 20-30 nm in diameter with x ∼ 0.33.Entities:
Year: 2011 PMID： 21740870 DOI： 10.1016/j.ultramic.2011.03.018
Source DB: PubMed Journal: Ultramicroscopy ISSN： 0304-3991 Impact factor: 2.689