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Literature DB >> 21721056

Ambipolar oxide thin-film transistor.

Kenji Nomura¹, Toshio Kamiya, Hideo Hosono.

Abstract

Entities: Chemical

Mesh：

Substances：

Year: 2011 PMID： 21721056 DOI： 10.1002/adma.201101410

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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13 in total

Review 1. Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictides.

Authors: Hideo Hosono; Keiichi Tanabe; Eiji Takayama-Muromachi; Hiroshi Kageyama; Shoji Yamanaka; Hiroaki Kumakura; Minoru Nohara; Hidenori Hiramatsu; Satoru Fujitsu
Journal: Sci Technol Adv Mater Date: 2015-05-08 Impact factor: 8.090

2. Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures.

Authors: Christopher M Caskey; Aaron Holder; Sarah Shulda; Steven T Christensen; David Diercks; Craig P Schwartz; David Biagioni; Dennis Nordlund; Alon Kukliansky; Amir Natan; David Prendergast; Bernardo Orvananos; Wenhao Sun; Xiuwen Zhang; Gerbrand Ceder; David S Ginley; William Tumas; John D Perkins; Vladan Stevanovic; Svitlana Pylypenko; Stephan Lany; Ryan M Richards; Andriy Zakutayev
Journal: J Chem Phys Date: 2016-04-14 Impact factor: 3.488

Ambipolar oxide thin-film transistor.

Review 1. Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictides.

2. Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures.

3. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

4. Extremely Sensitive Dependence of SnO_x Film Properties on Sputtering Power.

5. Structural characterization of SnO nanoparticles synthesized by the hydrothermal and microwave routes.

6. Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors.

7. Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer.

8. Fabrication of Transparent Mg(OH)₂ Thin Films by Drop-Dry Deposition.

Review 9. Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors.

10. Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors.