Imaging of Bernal stacked and misoriented graphene and boron nitride: experiment and simulation.

Experimental atomic resolution bright and high angle dark field transmission electron microscopy images of mono- and few-layer graphene and boron nitride, as well as of turbostratic arrangements in both materials, are compared to their simulated counterparts. Changes in the images according to defocus, layer number and accelerating voltage are discussed. It emerges that simulations with realistic microscope parameters accurately depict experimental graphene and boron nitride images and present a reliable tool for their interpretation.