Literature DB >> 21693943

Vibrational properties of hexagonal Ge(2)Sb(2)Te(5) from first principles.

G C Sosso1, S Caravati, C Gatti, S Assoni, M Bernasconi.   

Abstract

Phonons at the Γ point and the Raman spectrum of the hexagonal Ge(2)Sb(2)Te(5) were computed within density functional perturbation theory. The three different stackings of the Ge/Sb planes proposed in the experimental literature were considered. The theoretical Raman spectrum is similar for the three stackings with a marginally better agreement with experiments for the structure proposed by Matsunaga et al (2004 Acta Crystallogr. B 60 685) which assumes a disorder in Ge/Sb site occupation. Although the large broadening of the experimental Raman peaks prevents discriminating among the different stackings, the assignment of the Raman peaks to specific phonons is possible because the main features of the spectrum are rather insensitive to the actual distribution of atoms in the Sb/Ge sublattices. On the basis of the energetics (including configurational entropy) two stackings seem plausible candidates for GST, but only the mixed stacking by Matsunaga et al reproduces the spread of Ge/Sb-Te bond lengths measured experimentally.

Year:  2009        PMID: 21693943     DOI: 10.1088/0953-8984/21/24/245401

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  12 in total

1.  Influence of the local structure in phase-change materials on their dielectric permittivity.

Authors:  Kostiantyn V Shportko; Eugen F Venger
Journal:  Nanoscale Res Lett       Date:  2015-02-05       Impact factor: 4.703

2.  Ultrafast time-resolved electron diffraction revealing the nonthermal dynamics of near-UV photoexcitation-induced amorphization in Ge2Sb2Te5.

Authors:  Masaki Hada; Wataru Oba; Masashi Kuwahara; Ikufumi Katayama; Toshiharu Saiki; Jun Takeda; Kazutaka G Nakamura
Journal:  Sci Rep       Date:  2015-08-28       Impact factor: 4.379

3.  Optic phonons and anisotropic thermal conductivity in hexagonal Ge2Sb2Te5.

Authors:  Saikat Mukhopadhyay; Lucas Lindsay; David J Singh
Journal:  Sci Rep       Date:  2016-11-16       Impact factor: 4.379

4.  Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices.

Authors:  Xiaoming Yu; John Robertson
Journal:  Sci Rep       Date:  2016-11-17       Impact factor: 4.379

5.  Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Authors:  Eugenio Zallo; Stefano Cecchi; Jos E Boschker; Antonio M Mio; Fabrizio Arciprete; Stefania Privitera; Raffaella Calarco
Journal:  Sci Rep       Date:  2017-05-03       Impact factor: 4.379

6.  Atomic layer deposition and tellurization of Ge-Sb film for phase-change memory applications.

Authors:  Yewon Kim; Byeol Han; Yu-Jin Kim; Jeeyoon Shin; Seongyoon Kim; Romel Hidayat; Jae-Min Park; Wonyong Koh; Won-Jun Lee
Journal:  RSC Adv       Date:  2019-06-03       Impact factor: 3.361

7.  Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures.

Authors:  Andriy Lotnyk; Ulrich Ross; Sabine Bernütz; Erik Thelander; Bernd Rauschenbach
Journal:  Sci Rep       Date:  2016-05-25       Impact factor: 4.379

8.  Far-Infrared and Raman Spectroscopy Investigation of Phonon Modes in Amorphous and Crystalline Epitaxial GeTe-Sb2Te3 Alloys.

Authors:  V Bragaglia; K Holldack; J E Boschker; F Arciprete; E Zallo; T Flissikowski; R Calarco
Journal:  Sci Rep       Date:  2016-06-24       Impact factor: 4.379

9.  Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures.

Authors:  A M Mio; S M S Privitera; V Bragaglia; F Arciprete; S Cecchi; G Litrico; C Persch; R Calarco; E Rimini
Journal:  Sci Rep       Date:  2017-06-01       Impact factor: 4.379

10.  Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys.

Authors:  Caroline Chèze; Flavia Righi Riva; Giulia Di Bella; Ernesto Placidi; Simone Prili; Marco Bertelli; Adriano Diaz Fattorini; Massimo Longo; Raffaella Calarco; Marco Bernasconi; Omar Abou El Kheir; Fabrizio Arciprete
Journal:  Nanomaterials (Basel)       Date:  2022-03-18       Impact factor: 5.076

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