Literature DB >> 21693837

Density functional study of amorphous, liquid and crystalline Ge(2)Sb(2)Te(5): homopolar bonds and/or AB alternation?

J Akola1, R O Jones.   

Abstract

The amorphous, liquid and crystalline phases of the phase change material Ge(2)Sb(2)Te(5) (GST) have been studied by means of density functional/molecular dynamics simulations. The large sample (460 atoms and 52 vacancies in the unit cell) and long simulations (hundreds of picoseconds) provide much new information. Here we extend our original analysis (2007 Phys. Rev. B 76 235201) in important ways: partial coordination numbers and radial distribution functions, bond angle distributions, new local order parameters, vibration frequencies, and the charges on atoms and vacancies. The valence band densities of states in amorphous and crystalline GST are compared with ones from x-ray photoemission spectroscopy. The results for the liquid phase are new and those for the crystalline phase much expanded. GST shows pronounced AB alternation (A: Ge, Sb; B: Te), especially in its amorphous phase, and ABAB squares play a central role in the amorphous to crystalline transition. We comment on earlier speculations concerning the nature of the amorphous to crystalline transition.

Year:  2008        PMID: 21693837     DOI: 10.1088/0953-8984/20/46/465103

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  7 in total

1.  Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials.

Authors:  Dmitry Shakhvorostov; Razvan A Nistor; Lia Krusin-Elbaum; Glenn J Martyna; Dennis M Newns; Bruce G Elmegreen; Xiao-hu Liu; Zak E Hughes; Sujata Paul; Cyril Cabral; Simone Raoux; David B Shrekenhamer; Dimitri N Basov; Young Song; Martin H Müser
Journal:  Proc Natl Acad Sci U S A       Date:  2009-06-22       Impact factor: 11.205

2.  Origin of radiation tolerance in amorphous Ge2Sb2Te5 phase-change random-access memory material.

Authors:  Konstantinos Konstantinou; Tae Hoon Lee; Felix C Mocanu; Stephen R Elliott
Journal:  Proc Natl Acad Sci U S A       Date:  2018-05-07       Impact factor: 11.205

3.  From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials.

Authors:  Toshiyuki Matsunaga; Jaakko Akola; Shinji Kohara; Tetsuo Honma; Keisuke Kobayashi; Eiji Ikenaga; Robert O Jones; Noboru Yamada; Masaki Takata; Rie Kojima
Journal:  Nat Mater       Date:  2011-01-09       Impact factor: 43.841

4.  Structural, electronic and kinetic properties of the phase-change material Ge2Sb2Te5 in the liquid state.

Authors:  Mathias Schumacher; Hans Weber; Pál Jóvári; Yoshimi Tsuchiya; Tristan G A Youngs; Ivan Kaban; Riccardo Mazzarello
Journal:  Sci Rep       Date:  2016-06-08       Impact factor: 4.379

5.  Revealing the intrinsic nature of the mid-gap defects in amorphous Ge2Sb2Te5.

Authors:  Konstantinos Konstantinou; Felix C Mocanu; Tae-Hoon Lee; Stephen R Elliott
Journal:  Nat Commun       Date:  2019-07-11       Impact factor: 14.919

6.  Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films.

Authors:  M Bouška; S Pechev; Q Simon; R Boidin; V Nazabal; J Gutwirth; E Baudet; P Němec
Journal:  Sci Rep       Date:  2016-05-20       Impact factor: 4.379

7.  Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe.

Authors:  Bin Zhang; Xue-Peng Wang; Zhen-Ju Shen; Xian-Bin Li; Chuan-Shou Wang; Yong-Jin Chen; Ji-Xue Li; Jin-Xing Zhang; Ze Zhang; Sheng-Bai Zhang; Xiao-Dong Han
Journal:  Sci Rep       Date:  2016-05-03       Impact factor: 4.379

  7 in total

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