Literature DB >> 21693811

THz operation of asymmetric-nanochannel devices.

C Balocco1, M Halsall, N Q Vinh, A M Song.   

Abstract

The THz spectrum lies between microwaves and the mid-infrared, a region that remains largely unexplored mainly due to the bottleneck issue of lacking compact, solid state, emitters and detectors. Here, we report on a novel asymmetric-nanochannel device, known as the self-switching device, which can operate at frequencies up to 2.5 THz for temperature up to 150 K. This is, to our knowledge, not only the simplest diode but also the quickest acting electronic nanodevice reported to date. The radiation was generated by the free electron laser FELIX (Netherlands). The dependences of the device efficiency as a function of the electric bias, radiation intensity, radiation frequency and temperature are reported.

Entities:  

Year:  2008        PMID: 21693811     DOI: 10.1088/0953-8984/20/38/384203

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN: 0953-8984            Impact factor:   2.333


  1 in total

1.  Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode.

Authors:  Ying Wang; Liu-An Li; Jin-Ping Ao; Yue Hao
Journal:  Micromachines (Basel)       Date:  2020-01-16       Impact factor: 2.891

  1 in total

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