Literature DB >> 21690766

Nanoferroelectrics: statics and dynamics.

J F Scott1.   

Abstract

A topical review is given of the physics of submicron ferroelectrics, describing the application considerations for memory devices (both as switching memory elements for ferroelectric nonvolatile random access memories, FRAMs, and as passive capacitors for volatile dynamic random access memories, DRAMs) as well as the fundamental physics questions regarding both the thickness and lateral size of present interest.

Year:  2006        PMID： 21690766     DOI： 10.1088/0953-8984/18/17/R02

Source DB:  PubMed          Journal:  J Phys Condens Matter        ISSN： 0953-8984            Impact factor:   2.333


  5 in total

1.  Multiferroics: A way forward along domain walls.

Authors:  Hélène Béa; Patrycja Paruch
Journal:  Nat Mater       Date:  2009-03       Impact factor: 43.841

2.  Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films.

Authors:  Wei Jin Hu; Deng-Ming Juo; Lu You; Junling Wang; Yi-Chun Chen; Ying-Hao Chu; Tom Wu
Journal:  Sci Rep       Date:  2014-04-24       Impact factor: 4.379

3.  SbSI Nanosensors: from Gel to Single Nanowire Devices.

Authors:  Krystian Mistewicz; Marian Nowak; Regina Paszkiewicz; Anthony Guiseppi-Elie
Journal:  Nanoscale Res Lett       Date:  2017-02-07       Impact factor: 4.703

4.  Vortex domain structure in ferroelectric nanoplatelets and control of its transformation by mechanical load.

Authors:  W J Chen; Yue Zheng; Biao Wang
Journal:  Sci Rep       Date:  2012-11-12       Impact factor: 4.379

5.  Anomalous domain periodicity observed in ferroelectric PbTiO3 nanodots having 180° stripe domains.

Authors:  Jong Yeog Son; Seungwoo Song; Jung-Hoon Lee; Hyun Myung Jang
Journal:  Sci Rep       Date:  2016-05-26       Impact factor: 4.379
  5 in total

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