Literature DB >> 21671452

In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory.

Sang-Jun Choi1, Gyeong-Su Park, Ki-Hong Kim, Soohaeng Cho, Woo-Young Yang, Xiang-Shu Li, Jung-Hwan Moon, Kyung-Jin Lee, Kinam Kim.   

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Year:  2011        PMID： 21671452     DOI： 10.1002/adma.201100507

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  9 in total

1.  Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing.

Authors:  Jaehyun Kang; Taeyoon Kim; Suman Hu; Jaewook Kim; Joon Young Kwak; Jongkil Park; Jong Keuk Park; Inho Kim; Suyoun Lee; Sangbum Kim; YeonJoo Jeong
Journal:  Nat Commun       Date:  2022-07-12       Impact factor: 17.694

2.  Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices.

Authors:  Iulia Salaoru; Qingjiang Li; Ali Khiat; Themistoklis Prodromakis
Journal:  Nanoscale Res Lett       Date:  2014-10-04       Impact factor: 4.703

3.  NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching.

Authors:  Elena Filatova; Aleksei Konashuk; Yuri Petrov; Evgeny Ubyivovk; Andrey Sokolov; Andrei Selivanov; Victor Drozd
Journal:  Sci Technol Adv Mater       Date:  2016-06-24       Impact factor: 8.090

4.  Probing nanoscale oxygen ion motion in memristive systems.

Authors:  Yuchao Yang; Xiaoxian Zhang; Liang Qin; Qibin Zeng; Xiaohui Qiu; Ru Huang
Journal:  Nat Commun       Date:  2017-05-04       Impact factor: 14.919

5.  Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing.

Authors:  Sabina Abdul Hadi; Khaled M Humood; Maguy Abi Jaoude; Heba Abunahla; Hamda Faisal Al Shehhi; Baker Mohammad
Journal:  Sci Rep       Date:  2019-07-10       Impact factor: 4.379

Review 6.  Microscopic investigations of switching phenomenon in memristive systems: a mini review.

Authors:  Adnan Younis; Sean Li
Journal:  RSC Adv       Date:  2018-08-13       Impact factor: 3.361

7.  Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.

Authors:  Masashi Arita; Akihito Takahashi; Yuuki Ohno; Akitoshi Nakane; Atsushi Tsurumaki-Fukuchi; Yasuo Takahashi
Journal:  Sci Rep       Date:  2015-11-27       Impact factor: 4.379

8.  Kinetically driven switching and memory phenomena at the interface between a proton-conductive electrolyte and a titanium electrode.

Authors:  Takashi Hibino; Kazuyo Kobayashi; Masahiro Nagao
Journal:  Sci Rep       Date:  2016-08-16       Impact factor: 4.379

9.  The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector.

Authors:  Chaorong Zhong; Ruijuan Qi; Yonghui Zheng; Yan Cheng; Wenxiong Song; Rong Huang
Journal:  Micromachines (Basel)       Date:  2020-06-12       Impact factor: 2.891
  9 in total

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