| Literature DB >> 21659599 |
Yu-Ming Lin1, Alberto Valdes-Garcia, Shu-Jen Han, Damon B Farmer, Inanc Meric, Yanning Sun, Yanqing Wu, Christos Dimitrakopoulos, Alfred Grill, Phaedon Avouris, Keith A Jenkins.
Abstract
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.Entities:
Year: 2011 PMID: 21659599 DOI: 10.1126/science.1204428
Source DB: PubMed Journal: Science ISSN: 0036-8075 Impact factor: 47.728