Literature DB >> 21643344

THz emission characteristics from p/n junctions with metal lines under non-bias conditions for LSI failure analysis.

Masatsugu Yamashita1, Chiko Otani, Toru Matsumoto, Yoshihiro Midoh, Katsuyoshi Miura, Koji Nakamae, Kiyoshi Nikawa, Sunmi Kim, Hironaru Murakami, Masayoshi Tonouchi.   

Abstract

We have investigated the characteristics of THz emissions from p/n junctions with metallic lines under non-bias conditions. The waveforms, spectra, and polarizations depend on the length and shape of the lines. This indicates that the transient photocurrents from p/n junctions flow into the metallic lines that emit THz waves and act as an antenna. We have successfully demonstrated the non-contact inspection of open defects of multi-layered interconnects in a large-scale integrated circuit using the laser THz emission microscope (LTEM). The p/n junctions connected to the defective interconnects can be identified by comparing the LTEM images of normal and defective circuits.

Entities:  

Year:  2011        PMID: 21643344     DOI: 10.1364/OE.19.010864

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  3 in total

1.  Visualization of GaN surface potential using terahertz emission enhanced by local defects.

Authors:  Yuji Sakai; Iwao Kawayama; Hidetoshi Nakanishi; Masayoshi Tonouchi
Journal:  Sci Rep       Date:  2015-09-09       Impact factor: 4.379

Review 2.  Industrial Applications of Terahertz Sensing: State of Play.

Authors:  Mira Naftaly; Nico Vieweg; Anselm Deninger
Journal:  Sensors (Basel)       Date:  2019-09-27       Impact factor: 3.576

3.  Sub-wavelength terahertz imaging through optical rectification.

Authors:  Federico Sanjuan; Gwenaël Gaborit; Jean-Louis Coutaz
Journal:  Sci Rep       Date:  2018-09-10       Impact factor: 4.379

  3 in total

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