Literature DB >> 21639515

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements.

Arash Hazeghi1, Joseph A Sulpizio, Georgi Diankov, David Goldhaber-Gordon, H S Philip Wong.   

Abstract

We have developed a highly sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below k(B)T over a broad temperature range (4-300 K). We have achieved a resolution at room temperature of 60 aF/√Hz for a 10  mV ac excitation at 17.5 kHz, with an improved resolution at cryogenic temperatures, for the same excitation amplitude. We demonstrate the utility of our bridge for measuring the quantum capacitance of nanostructures by measuring the capacitance of top-gated graphene devices and cleanly resolving the density of states.

Entities:  

Year:  2011        PMID: 21639515     DOI: 10.1063/1.3582068

Source DB:  PubMed          Journal:  Rev Sci Instrum        ISSN: 0034-6748            Impact factor:   1.523


  2 in total

1.  Negative quantum capacitance induced by midgap states in single-layer graphene.

Authors:  Lin Wang; Yang Wang; Xiaolong Chen; Wei Zhu; Chao Zhu; Zefei Wu; Yu Han; Mingwei Zhang; Wei Li; Yuheng He; Wei Xiong; Kam Tuen Law; Dangsheng Su; Ning Wang
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

2.  A 17 GHz molecular rectifier.

Authors:  J Trasobares; D Vuillaume; D Théron; N Clément
Journal:  Nat Commun       Date:  2016-10-03       Impact factor: 14.919

  2 in total

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