Literature DB >> 21639465

Structural and electronic properties of ZrX2)and HfX2 (X=S and Se) from first principles calculations.

Hong Jiang1.   

Abstract

Early transition metal dichalcogenides (TMDC), characterized by their quasi-two-dimensional layered structure, have attracted intensive interest due to their versatile chemical and physical properties, but a comprehensive understanding of their structural and electronic properties from a first-principles point of view is still lacking. In this work, four simple TMDC materials, MX(2) (M = Zr and Hf, X = S and Se), are investigated by the Kohn-Sham density functional theory (KS-DFT) with different local or semilocal exchange-correlation (xc) functionals and many-body perturbation theory in the GW approximation. Although the widely used Perdew-Burke-Ernzelhof (PBE) generalized gradient approximation (GGA) xc functional overestimates the interlayer distance dramatically, two newly developed GGA functionals, PBE-for-solids (PBEsol) and Wu-Cohen 2006 (WC06), can reproduce experimental crystal structures of these TMDC materials very well. The GW method, currently the most accurate first-principles approach for electronic band structures of extended systems, gives the fundamental band gaps of all these materials in good agreement with the experimental values obtained from optical absorption. The minimal direct gaps from GW are systematically larger than those measured from thermoreflectance by about 0.1-0.3 eV, implying that excitonic effects may be stronger than previously estimated. The calculated density of states from GW quasi-particle band energies agrees very well with photo-emission spectroscopy data. Ionization potentials of these materials are also computed by combining PBE calculations based on the slab model and GW quasi-particle corrections. The calculated absolute band energies with respect to the vacuum level indicate that that ZrS(2) and HfS(2), although having suitable band gaps for visible light absorption, cannot be used for overall water splitting as a result of mismatch of the conduction band minimum with the redox potential of H(+)/H(2).
© 2011 American Institute of Physics

Entities:  

Year:  2011        PMID: 21639465     DOI: 10.1063/1.3594205

Source DB:  PubMed          Journal:  J Chem Phys        ISSN: 0021-9606            Impact factor:   3.488


  7 in total

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Journal:  RSC Adv       Date:  2020-06-25       Impact factor: 3.361

2.  Nonlinear Optical Properties of Zirconium Diselenide and Its Ultra-Fast Modulator Application.

Authors:  Mengxiao Wang; Yue Zheng; Linguang Guo; Xiaohan Chen; Huanian Zhang; Dengwang Li
Journal:  Nanomaterials (Basel)       Date:  2019-10-04       Impact factor: 5.076

3.  Influence of Mn, Fe, Co, and Cu Doping on the Photoelectric Properties of 1T HfS2 Crystals.

Authors:  Der-Yuh Lin; Yu-Tai Shih; Wei-Chan Tseng; Chia-Feng Lin; Hone-Zern Chen
Journal:  Materials (Basel)       Date:  2021-12-27       Impact factor: 3.623

4.  First principles study of optoelectronic and photocatalytic performance of novel transition metal dipnictide XP2 (X = Ti, Zr, Hf) monolayers.

Authors:  Sheraz Ahmad; Ismail Shahid; Nasir Shehzad; W Khan; H U Din; M Idrees; B Amin; A Laref
Journal:  RSC Adv       Date:  2022-04-11       Impact factor: 3.361

5.  First principles study on structural, electronic and optical properties of HfS2(1-x)Se2x and ZrS2(1-x)Se2x ternary alloys.

Authors:  Mohammadreza Razeghizadeh; Mahdi Pourfath
Journal:  RSC Adv       Date:  2022-05-11       Impact factor: 4.036

6.  Ultra-strong spin-orbit coupling and topological moiré engineering in twisted ZrS2 bilayers.

Authors:  Martin Claassen; Lede Xian; Dante M Kennes; Angel Rubio
Journal:  Nat Commun       Date:  2022-08-22       Impact factor: 17.694

7.  High-pressure Raman scattering in bulk HfS2: comparison of density functional theory methods in layered MS2 compounds (M = Hf, Mo) under compression.

Authors:  J Ibáñez; T Woźniak; F Dybala; R Oliva; S Hernández; R Kudrawiec
Journal:  Sci Rep       Date:  2018-08-24       Impact factor: 4.379

  7 in total

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