| Literature DB >> 21615979 |
David Hernández-Maldonado1, Miriam Herrera, Pablo Alonso-González, Yolanda González, Luisa González, Jaume Gazquez, María Varela, Stephen J Pennycook, María de la Paz Guerrero-Lebrero, Joaquín Pizarro, Pedro L Galindo, Sergio I Molina.
Abstract
We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1-xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett 61, 557-559].Year: 2011 PMID： 21615979 DOI： 10.1017/S1431927611000213
Source DB: PubMed Journal: Microsc Microanal ISSN： 1431-9276 Impact factor: 4.127