Literature DB >> 21604708

Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires.

Jesper Wallentin1, Kilian Mergenthaler, Martin Ek, L Reine Wallenberg, Lars Samuelson, Knut Deppert, Mats-Erik Pistol, Magnus T Borgström.   

Abstract

We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).

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Year:  2011        PMID: 21604708     DOI: 10.1021/nl200492g

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  4 in total

1.  Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

Authors:  Rainer Timm; Olof Persson; David L J Engberg; Alexander Fian; James L Webb; Jesper Wallentin; Andreas Jönsson; Magnus T Borgström; Lars Samuelson; Anders Mikkelsen
Journal:  Nano Lett       Date:  2013-10-02       Impact factor: 11.189

2.  Quantum dot-like excitonic behavior in individual single walled-carbon nanotubes.

Authors:  Xu Wang; Jack A Alexander-Webber; Wei Jia; Benjamin P L Reid; Samuel D Stranks; Mark J Holmes; Christopher C S Chan; Chaoyong Deng; Robin J Nicholas; Robert A Taylor
Journal:  Sci Rep       Date:  2016-11-16       Impact factor: 4.379

3.  Au-seeded growth of vertical and in-plane III-V nanowires on graphite substrates.

Authors:  Jesper Wallentin; Dominik Kriegner; Julian Stangl; Magnus T Borgström
Journal:  Nano Lett       Date:  2014-03-04       Impact factor: 11.189

4.  Direct growth of single-crystalline III-V semiconductors on amorphous substrates.

Authors:  Kevin Chen; Rehan Kapadia; Audrey Harker; Sujay Desai; Jeong Seuk Kang; Steven Chuang; Mahmut Tosun; Carolin M Sutter-Fella; Michael Tsang; Yuping Zeng; Daisuke Kiriya; Jubin Hazra; Surabhi Rao Madhvapathy; Mark Hettick; Yu-Ze Chen; James Mastandrea; Matin Amani; Stefano Cabrini; Yu-Lun Chueh; Joel W Ager Iii; Daryl C Chrzan; Ali Javey
Journal:  Nat Commun       Date:  2016-01-27       Impact factor: 14.919

  4 in total

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