Literature DB >> 21583995

3,3',5,5'-Tetra-bromo-2,2'-bithio-phene.

Hongqi Li1, Lin Li.   

Abstract

The title compound, C(8)H(2)Br(4)S(2), was prepared by bromination of 2,2'-bithio-phene with bromine. The mol-ecule is located on a crystallographic twofold rotation axis, thereby imposing equal geometry of the two thio-phene rings. Each five-membered ring is planar [maximum deviation 0.011 (9) Å] and the dihedral angle between the planes through the rings is 47.2 (4)°. The mol-ecules are arranged to minimize intramolecular contacts between the 3-3' and 5-5'-bromine atoms.

Entities:  

Year:  2009        PMID: 21583995      PMCID: PMC2977652          DOI: 10.1107/S1600536809011647

Source DB:  PubMed          Journal:  Acta Crystallogr Sect E Struct Rep Online        ISSN: 1600-5368


Related literature

For use of the title compound as an intermediate in the synthesis of oligothiophenes and polythiophenes, see: Roncali (1997 ▶); Funahashi et al. (2005 ▶). For synthetic methods, see: Takahashi et al. (2006 ▶); Lin et al. (2005 ▶).

Experimental

Crystal data

C8H2Br4S2 M = 481.86 Monoclinic, a = 17.164 (3) Å b = 4.0153 (7) Å c = 18.655 (3) Å β = 115.395 (3)° V = 1161.4 (4) Å3 Z = 4 Mo Kα radiation μ = 14.18 mm−1 T = 293 K 0.40 × 0.17 × 0.05 mm

Data collection

Bruker SMART CCD area-detector diffractometer Absorption correction: multi-scan (SADABS; Sheldrick, 2004 ▶) T min = 0.258, T max = 1.000 (expected range = 0.122–0.472) 2792 measured reflections 1077 independent reflections 886 reflections with I > 2σ(I) R int = 0.146

Refinement

R[F 2 > 2σ(F 2)] = 0.078 wR(F 2) = 0.208 S = 1.00 1077 reflections 64 parameters H-atom parameters constrained Δρmax = 1.15 e Å−3 Δρmin = −1.06 e Å−3 Data collection: SMART (Bruker, 2001 ▶); cell refinement: SAINT (Bruker, 2001 ▶); data reduction: SAINT; program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: SHELXTL (Sheldrick, 2008 ▶); software used to prepare material for publication: SHELXTL. Crystal structure: contains datablocks global, I. DOI: 10.1107/S1600536809011647/kj2109sup1.cif Structure factors: contains datablocks I. DOI: 10.1107/S1600536809011647/kj2109Isup2.hkl Additional supplementary materials: crystallographic information; 3D view; checkCIF report
C8H2Br4S2Dx = 2.756 Mg m3
Mr = 481.86Melting point = 413–414 K
Monoclinic, C2/cMo Kα radiation, λ = 0.71073 Å
a = 17.164 (3) ÅCell parameters from 1249 reflections
b = 4.0153 (7) Åθ = 4.8–55.3°
c = 18.655 (3) ŵ = 14.18 mm1
β = 115.395 (3)°T = 293 K
V = 1161.4 (4) Å3Prismatic, yellow
Z = 40.40 × 0.17 × 0.05 mm
F(000) = 888
Bruker SMART CCD area-detector diffractometer1077 independent reflections
Radiation source: fine-focus sealed tube886 reflections with I > 2σ(I)
graphiteRint = 0.146
φ and ω scansθmax = 25.5°, θmin = 2.4°
Absorption correction: multi-scan (SADABS; Sheldrick, 2004)h = −20→18
Tmin = 0.258, Tmax = 1.000k = −4→4
2792 measured reflectionsl = −22→21
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.078Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.208H-atom parameters constrained
S = 1.00w = 1/[σ2(Fo2) + (0.1428P)2] where P = (Fo2 + 2Fc2)/3
1077 reflections(Δ/σ)max < 0.001
64 parametersΔρmax = 1.15 e Å3
0 restraintsΔρmin = −1.06 e Å3
Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.
xyzUiso*/Ueq
Br10.17755 (6)0.2991 (3)0.27753 (6)0.0443 (5)
Br20.11718 (8)0.7463 (3)0.54198 (6)0.0562 (5)
S1−0.00225 (17)0.7354 (6)0.36201 (13)0.0393 (7)
C10.0301 (5)0.581 (2)0.2918 (4)0.0331 (17)
C20.1140 (5)0.480 (2)0.3291 (4)0.0354 (17)
C40.0973 (6)0.650 (2)0.4373 (5)0.041 (2)
C30.1540 (5)0.521 (2)0.4129 (4)0.0411 (19)
H30.21090.46690.44590.049*
U11U22U33U12U13U23
Br10.0524 (7)0.0457 (7)0.0483 (7)0.0023 (4)0.0344 (6)−0.0050 (4)
Br20.0735 (9)0.0718 (9)0.0312 (7)−0.0072 (5)0.0298 (6)−0.0063 (4)
S10.0508 (15)0.0482 (13)0.0306 (12)0.0043 (9)0.0286 (11)−0.0007 (8)
C10.050 (5)0.030 (4)0.034 (4)0.000 (4)0.032 (4)0.000 (3)
C20.052 (5)0.030 (4)0.034 (4)−0.006 (3)0.028 (4)0.001 (3)
C40.059 (6)0.042 (5)0.028 (4)0.003 (4)0.025 (4)0.006 (3)
C30.050 (5)0.046 (5)0.035 (4)−0.003 (4)0.025 (4)0.005 (4)
Br1—C21.882 (8)C1—C1i1.455 (15)
Br2—C41.873 (8)C2—C31.422 (11)
S1—C41.719 (9)C4—C31.342 (11)
S1—C11.741 (7)C3—H30.9300
C1—C21.365 (11)
C4—S1—C191.0 (4)C3—C4—S1114.3 (6)
C2—C1—C1i131.0 (8)C3—C4—Br2126.8 (7)
C2—C1—S1109.2 (6)S1—C4—Br2118.9 (5)
C1i—C1—S1119.8 (7)C4—C3—C2109.8 (8)
C1—C2—C3115.6 (7)C4—C3—H3125.1
C1—C2—Br1124.7 (6)C2—C3—H3125.1
C3—C2—Br1119.6 (6)
C4—S1—C1—C2−0.9 (6)C1—S1—C4—C31.7 (7)
C4—S1—C1—C1i179.8 (5)C1—S1—C4—Br2−179.2 (5)
C1i—C1—C2—C3179.2 (5)S1—C4—C3—C2−1.9 (10)
S1—C1—C2—C30.1 (9)Br2—C4—C3—C2179.1 (6)
C1i—C1—C2—Br1−0.2 (11)C1—C2—C3—C41.2 (11)
S1—C1—C2—Br1−179.4 (4)Br1—C2—C3—C4−179.4 (6)
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