Literature DB >> 21580770

1,4-Bis(dimethyl-silyl)-2,5-diphenyl-benzene.

Lei Fang, Rui Wang, Li-Min Chen, Cai-Hong Xu, Shu-Hong Li.   

Abstract

The mol-ecule of the title compound, C(22)H(26)Si(2), is centrosymmetric. The dihedral angle between the central benzene ring and its phenyl substituents is 67.7 (2)°. The crystal packing is stabilized by van der Waals forces.

Entities:  

Year:  2010        PMID: 21580770      PMCID: PMC2983822          DOI: 10.1107/S1600536810010913

Source DB:  PubMed          Journal:  Acta Crystallogr Sect E Struct Rep Online        ISSN: 1600-5368


Related literature

For investigations on the effect of silyl substituents on the photophysics of p-terphenyls, see: Feng et al. (2007 ▶).

Experimental

Crystal data

C22H26Si2 M = 346.61 Monoclinic, a = 14.8966 (3) Å b = 6.0132 (1) Å c = 26.1211 (6) Å β = 123.166 (1)° V = 1958.64 (7) Å3 Z = 4 Mo Kα radiation μ = 0.18 mm−1 T = 173 K 0.56 × 0.39 × 0.11 mm

Data collection

Rigaku R-AXIS RAPID IP area-detector diffractometer Absorption correction: multi-scan (ABSCOR; Higashi, 1995 ▶) T min = 0.905, T max = 0.980 4032 measured reflections 2220 independent reflections 2009 reflections with I > 2σ(I) R int = 0.028

Refinement

R[F 2 > 2σ(F 2)] = 0.055 wR(F 2) = 0.118 S = 1.22 2220 reflections 111 parameters H-atom parameters constrained Δρmax = 0.40 e Å−3 Δρmin = −0.22 e Å−3 Data collection: RAPID-AUTO (Rigaku, 2001 ▶); cell refinement: RAPID-AUTO; data reduction: RAPID-AUTO; program(s) used to solve structure: SHELXS97 (Sheldrick, 2008 ▶); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008 ▶); molecular graphics: SHELXTL (Sheldrick, 2008 ▶); software used to prepare material for publication: SHELXL97. Crystal structure: contains datablocks global, I. DOI: 10.1107/S1600536810010913/gk2260sup1.cif Structure factors: contains datablocks I. DOI: 10.1107/S1600536810010913/gk2260Isup2.hkl Additional supplementary materials: crystallographic information; 3D view; checkCIF report
C22H26Si2F(000) = 744
Mr = 346.61Dx = 1.175 Mg m3
Monoclinic, C2/cMo Kα radiation, λ = 0.71073 Å
Hall symbol: -C 2ycCell parameters from 4032 reflections
a = 14.8966 (3) Åθ = 2.7–27.5°
b = 6.0132 (1) ŵ = 0.18 mm1
c = 26.1211 (6) ÅT = 173 K
β = 123.166 (1)°Plate, colorless
V = 1958.64 (7) Å30.56 × 0.39 × 0.11 mm
Z = 4
Rigaku R-AXIS RAPID IP area-detector diffractometer2220 independent reflections
Radiation source: rotating anode2009 reflections with I > 2σ(I)
graphiteRint = 0.028
ω scans at fixed χ = 45°θmax = 27.5°, θmin = 2.7°
Absorption correction: multi-scan (ABSCOR; Higashi, 1995)h = −19→19
Tmin = 0.905, Tmax = 0.980k = −7→7
4032 measured reflectionsl = −33→33
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.055Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.118H-atom parameters constrained
S = 1.22w = 1/[σ2(Fo2) + (0.0432P)2 + 2.0232P] where P = (Fo2 + 2Fc2)/3
2220 reflections(Δ/σ)max < 0.001
111 parametersΔρmax = 0.40 e Å3
0 restraintsΔρmin = −0.22 e Å3
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > 2σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.
xyzUiso*/Ueq
Si1−0.03046 (4)0.64331 (9)0.08538 (2)0.02208 (16)
H10.05900.51940.12230.026*
C1−0.00698 (14)0.8349 (3)0.03690 (8)0.0207 (4)
C2−0.09110 (15)0.8753 (3)−0.02358 (8)0.0220 (4)
H2−0.15450.7887−0.04030.026*
C30.08631 (14)0.9637 (3)0.06040 (8)0.0202 (4)
C40.18299 (14)0.9316 (3)0.12353 (8)0.0208 (4)
C50.21644 (16)1.0962 (3)0.16753 (9)0.0276 (4)
H50.17621.22980.15780.033*
C60.30788 (17)1.0685 (4)0.22563 (9)0.0314 (5)
H60.32921.18190.25550.038*
C70.36813 (15)0.8762 (4)0.24023 (8)0.0285 (4)
H70.43140.85820.27980.034*
C80.33562 (16)0.7103 (4)0.19677 (9)0.0310 (5)
H80.37630.57730.20670.037*
C90.24395 (16)0.7377 (3)0.13896 (8)0.0261 (4)
H90.22230.62310.10940.031*
C10−0.0605 (2)0.8174 (4)0.13337 (10)0.0375 (5)
H10A−0.12490.90650.10680.056*
H10B0.00020.91640.15920.056*
H10C−0.07260.72090.15930.056*
C11−0.14236 (19)0.4490 (4)0.03752 (10)0.0377 (5)
H11A−0.15650.35950.06370.057*
H11B−0.12300.35090.01510.057*
H11C−0.20680.53380.00840.057*
U11U22U33U12U13U23
Si10.0233 (3)0.0233 (3)0.0197 (3)0.0028 (2)0.0118 (2)0.0051 (2)
C10.0221 (9)0.0217 (9)0.0194 (8)0.0021 (7)0.0120 (7)0.0018 (7)
C20.0213 (9)0.0241 (9)0.0199 (8)−0.0012 (7)0.0110 (7)−0.0005 (7)
C30.0208 (9)0.0228 (9)0.0162 (8)0.0024 (7)0.0096 (7)0.0009 (7)
C40.0190 (8)0.0251 (9)0.0170 (8)0.0005 (7)0.0090 (7)0.0016 (7)
C50.0268 (10)0.0246 (10)0.0242 (9)0.0041 (8)0.0094 (8)−0.0009 (8)
C60.0315 (11)0.0333 (11)0.0202 (9)0.0000 (9)0.0082 (8)−0.0051 (8)
C70.0202 (9)0.0406 (12)0.0174 (8)0.0028 (8)0.0056 (7)0.0015 (8)
C80.0259 (10)0.0365 (11)0.0242 (9)0.0115 (9)0.0096 (8)0.0038 (9)
C90.0276 (10)0.0274 (10)0.0199 (9)0.0051 (8)0.0108 (8)−0.0020 (8)
C100.0482 (13)0.0381 (12)0.0341 (11)0.0045 (10)0.0275 (11)0.0008 (10)
C110.0454 (13)0.0356 (12)0.0367 (12)−0.0103 (10)0.0254 (11)−0.0035 (10)
Si1—C111.851 (2)C6—C71.383 (3)
Si1—C101.866 (2)C6—H60.9500
Si1—C11.8812 (19)C7—C81.385 (3)
Si1—H11.3623C7—H70.9500
C1—C21.400 (2)C8—C91.384 (3)
C1—C31.405 (3)C8—H80.9500
C2—C3i1.394 (3)C9—H90.9500
C2—H20.9500C10—H10A0.9800
C3—C2i1.394 (3)C10—H10B0.9800
C3—C41.494 (2)C10—H10C0.9800
C4—C51.386 (3)C11—H11A0.9800
C4—C91.395 (3)C11—H11B0.9800
C5—C61.387 (3)C11—H11C0.9800
C5—H50.9500
C11—Si1—C10110.47 (11)C5—C6—H6119.9
C11—Si1—C1111.24 (9)C6—C7—C8119.55 (17)
C10—Si1—C1108.04 (10)C6—C7—H7120.2
C11—Si1—H1107.7C8—C7—H7120.2
C10—Si1—H1109.4C9—C8—C7120.16 (19)
C1—Si1—H1110.0C9—C8—H8119.9
C2—C1—C3117.29 (16)C7—C8—H8119.9
C2—C1—Si1118.99 (14)C8—C9—C4120.83 (18)
C3—C1—Si1123.17 (13)C8—C9—H9119.6
C3i—C2—C1123.17 (17)C4—C9—H9119.6
C3i—C2—H2118.4Si1—C10—H10A109.5
C1—C2—H2118.4Si1—C10—H10B109.5
C2i—C3—C1119.54 (16)H10A—C10—H10B109.5
C2i—C3—C4117.97 (16)Si1—C10—H10C109.5
C1—C3—C4122.47 (16)H10A—C10—H10C109.5
C5—C4—C9118.37 (16)H10B—C10—H10C109.5
C5—C4—C3121.00 (17)Si1—C11—H11A109.5
C9—C4—C3120.59 (17)Si1—C11—H11B109.5
C4—C5—C6120.91 (18)H11A—C11—H11B109.5
C4—C5—H5119.5Si1—C11—H11C109.5
C6—C5—H5119.5H11A—C11—H11C109.5
C7—C6—C5120.18 (19)H11B—C11—H11C109.5
C7—C6—H6119.9
C11—Si1—C1—C223.44 (19)C1—C3—C4—C5−114.5 (2)
C10—Si1—C1—C2−97.97 (17)C2i—C3—C4—C9−110.8 (2)
C11—Si1—C1—C3−165.30 (16)C1—C3—C4—C967.7 (2)
C10—Si1—C1—C373.29 (18)C9—C4—C5—C6−0.4 (3)
C3—C1—C2—C3i−0.6 (3)C3—C4—C5—C6−178.25 (18)
Si1—C1—C2—C3i171.16 (14)C4—C5—C6—C70.9 (3)
C2—C1—C3—C2i0.6 (3)C5—C6—C7—C8−1.0 (3)
Si1—C1—C3—C2i−170.81 (14)C6—C7—C8—C90.6 (3)
C2—C1—C3—C4−177.92 (17)C7—C8—C9—C40.0 (3)
Si1—C1—C3—C410.7 (3)C5—C4—C9—C80.0 (3)
C2i—C3—C4—C567.0 (2)C3—C4—C9—C8177.82 (19)
  2 in total

1.  From helical to staggered stacking of zigzag nanographenes.

Authors:  Xinliang Feng; Wojciech Pisula; Klaus Müllen
Journal:  J Am Chem Soc       Date:  2007-10-26       Impact factor: 15.419

2.  A short history of SHELX.

Authors:  George M Sheldrick
Journal:  Acta Crystallogr A       Date:  2007-12-21       Impact factor: 2.290

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.