Literature DB >> 21572209

Non-volatile domain nucleation and growth in multiferroic BiFeO3 films.

Yi-Chun Chen1, Guang-Fu Wang, Hsiang-Hua Tai, Jhih-Wei Chen, Yen-Chin Huang, Jan-Chi Yang, Ying-Hao Chu.   

Abstract

We have presented a systematical study of the domain nucleation and growth behaviors in multiferroic BiFeO(3) (BFO) films. Both the ferroelectric and the ferroelastic switching dynamics were investigated. Several environmental parameters, including the polarization orientations, the monodomain-like matrix, and the ordered domain walls as local boundaries, were well controlled by thin-film strain engineering through changing the vicinal angles of the substrates. The tip-based domain dynamics was studied by subsequent piezoresponse force microscope (PFM) imaging of the domain evolution under external voltage pulses. For the nanodomains written in the monodomain-like environment, the domain wall performed the thermal activated motion. The as-grown 71° domain walls can act as pinning centers for the ferroelectric domain growth driven by low fields; moreover, ferroelastic nucleation near a 71° domain wall will cause the deformation of the domain wall. The ferroelastic domain growth possessed relatively small activation fields, and therefore usually performed non-activated motion. This study revealed the effects of local environments on the dynamics forming nanoscale domains, and opened a pathway for applications in novel non-volatile functional devices.

Year:  2011        PMID: 21572209     DOI: 10.1088/0957-4484/22/25/254030

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  4 in total

1.  Universal ferroelectric switching dynamics of vinylidene fluoride-trifluoroethylene copolymer films.

Authors:  Wei Jin Hu; Deng-Ming Juo; Lu You; Junling Wang; Yi-Chun Chen; Ying-Hao Chu; Tom Wu
Journal:  Sci Rep       Date:  2014-04-24       Impact factor: 4.379

2.  High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states.

Authors:  Zhongwen Li; Yujia Wang; Guo Tian; Peilian Li; Lina Zhao; Fengyuan Zhang; Junxiang Yao; Hua Fan; Xiao Song; Deyang Chen; Zhen Fan; Minghui Qin; Min Zeng; Zhang Zhang; Xubing Lu; Shejun Hu; Chihou Lei; Qingfeng Zhu; Jiangyu Li; Xingsen Gao; Jun-Ming Liu
Journal:  Sci Adv       Date:  2017-08-18       Impact factor: 14.136

3.  Field enhancement of electronic conductance at ferroelectric domain walls.

Authors:  Rama K Vasudevan; Ye Cao; Nouamane Laanait; Anton Ievlev; Linglong Li; Jan-Chi Yang; Ying-Hao Chu; Long-Qing Chen; Sergei V Kalinin; Petro Maksymovych
Journal:  Nat Commun       Date:  2017-11-06       Impact factor: 14.919

4.  Superior polarization retention through engineered domain wall pinning.

Authors:  Dawei Zhang; Daniel Sando; Pankaj Sharma; Xuan Cheng; Fan Ji; Vivasha Govinden; Matthew Weyland; Valanoor Nagarajan; Jan Seidel
Journal:  Nat Commun       Date:  2020-01-17       Impact factor: 14.919

  4 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.