Literature DB >> 21572202

TiO2--a prototypical memristive material.

K Szot1, M Rogala, W Speier, Z Klusek, A Besmehn, R Waser.   

Abstract

Redox-based memristive switching has been observed in many binary transition metal oxides and related compounds. Since, on the one hand, many recent reports utilize TiO(2) for their studies of the memristive phenomenon and, on the other hand, there is a long history of the electronic structure and the crystallographic structure of TiO(2) under the impact of reduction and oxidation processes, we selected this material as a prototypical material to provide deeper insight into the mechanisms behind memristive switching. In part I, we briefly outline the results of the historical and recent studies of electroforming and resistive switching of TiO(2)-based cells. We describe the (tiny) stoichiometrical range for TiO(2 - x) as a homogeneous compound, the aggregation of point defects (oxygen vacancies) into extended defects, and the formation of the various Magnéli phases. Furthermore, we discuss the driving forces for these solid-state reactions from the thermodynamical point of view. In part II, we provide new experimental details about the hierarchical transformation of TiO(2) single crystals into Magnéli phases, and vice versa, under the influence of chemical, electrical and thermal gradients, on the basis of the macroscopic and nanoscopic measurements. Those include thermogravimetry, high-temperature x-ray diffraction (XRD), high-temperature conductivity measurements, as well as low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and LC-AFM (atomic force microscope equipped with a conducting tip) studies. Conclusions are drawn concerning the relevant parameters that need to be controlled in order to tailor the memristive properties.

Entities:  

Year:  2011        PMID: 21572202     DOI: 10.1088/0957-4484/22/25/254001

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  13 in total

1.  Resolving the adsorption of molecular O2 on the rutile TiO2(110) surface by noncontact atomic force microscopy.

Authors:  Igor Sokolović; Michele Reticcioli; Martin Čalkovský; Margareta Wagner; Michael Schmid; Cesare Franchini; Ulrike Diebold; Martin Setvín
Journal:  Proc Natl Acad Sci U S A       Date:  2020-06-11       Impact factor: 11.205

2.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

3.  Transformations of PTCDA structures on rutile TiO2 induced by thermal annealing and intermolecular forces.

Authors:  Szymon Godlewski; Jakub S Prauzner-Bechcicki; Thilo Glatzel; Ernst Meyer; Marek Szymoński
Journal:  Beilstein J Nanotechnol       Date:  2015-07-10       Impact factor: 3.649

4.  Correlative multimodal probing of ionically-mediated electromechanical phenomena in simple oxides.

Authors:  Yunseok Kim; Evgheni Strelcov; In Rok Hwang; Taekjib Choi; Bae Ho Park; Stephen Jesse; Sergei V Kalinin
Journal:  Sci Rep       Date:  2013-10-11       Impact factor: 4.379

5.  Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

Authors:  Yi-Jen Huang; Shih-Chun Chao; Der-Hsien Lien; Cheng-Yen Wen; Jr-Hau He; Si-Chen Lee
Journal:  Sci Rep       Date:  2016-04-07       Impact factor: 4.379

6.  Electrically driven optical metamaterials.

Authors:  Quynh Le-Van; Xavier Le Roux; Abdelhanin Aassime; Aloyse Degiron
Journal:  Nat Commun       Date:  2016-06-22       Impact factor: 14.919

7.  Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases.

Authors:  Woongkyu Lee; Sijung Yoo; Kyung Jean Yoon; In Won Yeu; Hye Jung Chang; Jung-Hae Choi; Susanne Hoffmann-Eifert; Rainer Waser; Cheol Seong Hwang
Journal:  Sci Rep       Date:  2016-02-02       Impact factor: 4.379

8.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703

9.  Charge storage in oxygen deficient phases of TiO2: defect Physics without defects.

Authors:  A C M Padilha; H Raebiger; A R Rocha; G M Dalpian
Journal:  Sci Rep       Date:  2016-07-01       Impact factor: 4.379

10.  Resistive Switching of Sub-10 nm TiO₂ Nanoparticle Self-Assembled Monolayers.

Authors:  Dirk Oliver Schmidt; Nicolas Raab; Michael Noyong; Venugopal Santhanam; Regina Dittmann; Ulrich Simon
Journal:  Nanomaterials (Basel)       Date:  2017-11-04       Impact factor: 5.076

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