Literature DB >> 21563787

Toward wafer scale fabrication of graphene based spin valve devices.

Ahmet Avsar1, Tsung-Yeh Yang, Sukang Bae, Jayakumar Balakrishnan, Frank Volmer, Manu Jaiswal, Zheng Yi, Syed Rizwan Ali, Gernot Güntherodt, Byung Hee Hong, Bernd Beschoten, Barbaros Özyilmaz.   

Abstract

We demonstrate injection, transport, and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single layer and bilayer graphene. We observe spin relaxation times comparable to those reported for exfoliated graphene samples demonstrating that chemical vapor deposition specific structural differences such as nanoripples do not limit spin transport in the present samples. Our observations make Cu-CVD graphene a promising material of choice for large scale spintronic applications.

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Year:  2011        PMID: 21563787     DOI: 10.1021/nl200714q

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  13 in total

1.  Layer-by-layer assembly of vertically conducting graphene devices.

Authors:  Jing-Jing Chen; Jie Meng; Yang-Bo Zhou; Han-Chun Wu; Ya-Qing Bie; Zhi-Min Liao; Da-Peng Yu
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

2.  Graphene spintronics.

Authors:  Wei Han; Roland K Kawakami; Martin Gmitra; Jaroslav Fabian
Journal:  Nat Nanotechnol       Date:  2014-10       Impact factor: 39.213

3.  Long distance spin communication in chemical vapour deposited graphene.

Authors:  M Venkata Kamalakar; Christiaan Groenveld; André Dankert; Saroj P Dash
Journal:  Nat Commun       Date:  2015-04-10       Impact factor: 14.919

4.  Spin dynamics and relaxation in graphene dictated by electron-hole puddles.

Authors:  Dinh Van Tuan; Frank Ortmann; Aron W Cummings; David Soriano; Stephan Roche
Journal:  Sci Rep       Date:  2016-02-15       Impact factor: 4.379

5.  Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor.

Authors:  Jangyup Son; Soogil Lee; Sang Jin Kim; Byung Cheol Park; Han-Koo Lee; Sanghoon Kim; Jae Hoon Kim; Byung Hee Hong; Jongill Hong
Journal:  Nat Commun       Date:  2016-11-10       Impact factor: 14.919

6.  Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure.

Authors:  Wenjing Yan; Edurne Sagasta; Mário Ribeiro; Yasuhiro Niimi; Luis E Hueso; Fèlix Casanova
Journal:  Nat Commun       Date:  2017-09-22       Impact factor: 14.919

7.  Graphene transistors for interfacing with cells: towards a deeper understanding of liquid gating and sensitivity.

Authors:  Dmitry Kireev; Max Brambach; Silke Seyock; Vanessa Maybeck; Wangyang Fu; Bernhard Wolfrum; Andreas Offenhäusser
Journal:  Sci Rep       Date:  2017-07-27       Impact factor: 4.379

8.  Optospintronics in Graphene via Proximity Coupling.

Authors:  Ahmet Avsar; Dmitrii Unuchek; Jiawei Liu; Oriol Lopez Sanchez; Kenji Watanabe; Takashi Taniguchi; Barbaros Özyilmaz; Andras Kis
Journal:  ACS Nano       Date:  2017-11-01       Impact factor: 15.881

9.  Growth and Characterisation Studies of Eu3O4 Thin Films Grown on Si/SiO2 and Graphene.

Authors:  Razan O M Aboljadayel; Adrian Ionescu; Oliver J Burton; Gleb Cheglakov; Stephan Hofmann; Crispin H W Barnes
Journal:  Nanomaterials (Basel)       Date:  2021-06-17       Impact factor: 5.076

10.  Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures.

Authors:  Nojoon Myoung; Hee Chul Park; Seung Joo Lee
Journal:  Sci Rep       Date:  2016-04-29       Impact factor: 4.379

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